JANKCCP2N3500-Transistor-Die Overview
The JANKCCP2N3500-Transistor-Die is a high-performance semiconductor component designed for efficient switching and amplification in power electronics. Its die-level configuration ensures minimal parasitic elements, enabling enhanced speed and thermal management in compact designs. This transistor die is suitable for integration in advanced circuits requiring reliable current handling and voltage control. Ideal for engineers and sourcing specialists seeking optimized transistor dies for industrial applications, it delivers consistent electrical characteristics with robust construction. For more detailed technical data and procurement options, visit IC Manufacturer.
JANKCCP2N3500-Transistor-Die Key Features
- Efficient switching capability: Enables fast transitions with minimal losses, improving overall circuit efficiency.
- High voltage tolerance: Supports robust operation in demanding electrical environments, increasing device reliability.
- Compact die size: Facilitates integration into dense circuit layouts, saving board space and reducing parasitic inductance.
- Thermal stability: Designed to maintain performance under elevated temperature conditions, ensuring long-term durability.
JANKCCP2N3500-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Collector-Emitter Voltage (Vce) | 350 V |
| Maximum Collector Current (Ic) | 2 A |
| Power Dissipation (Pd) | 30 W |
| Transition Frequency (fT) | 100 MHz |
| Gain Bandwidth Product | 50 MHz |
| Base-Emitter Voltage (Vbe) | 5 V max |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | Die (bare silicon) |
JANKCCP2N3500-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage handling and switching speed compared to typical discrete transistors, with reduced parasitic capacitance due to its bare die format. Its compact size supports integration in space-constrained designs, while higher thermal tolerance enhances reliability in industrial applications. These advantages make the device well-suited for engineers prioritizing precision, efficiency, and durability in power semiconductor solutions.
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Typical Applications
- Power management circuits requiring efficient switching and amplification to optimize energy use and device longevity in industrial systems.
- High-frequency amplifiers where fast transition times and stable gain are critical to signal integrity.
- Embedded systems and modules with limited board space benefiting from the compact transistor die format.
- Thermally demanding environments where reliable semiconductor performance under heat stress is essential.
JANKCCP2N3500-Transistor-Die Brand Info
The JANKCCP2N3500-Transistor-Die is produced under stringent quality control by a leading semiconductor manufacturer specializing in power transistor dies. This product reflects the brand??s commitment to delivering reliable, high-performance components tailored for industrial electronics. Backed by advanced fabrication processes, the transistor die supports diverse applications while meeting rigorous industry standards for electrical and thermal performance.
FAQ
What are the primary electrical limits of the JANKCCP2N3500 transistor die?
The device supports a maximum collector-emitter voltage of 350 V and a collector current up to 2 A. It can dissipate up to 30 W of power, suitable for medium-power applications requiring robust voltage and current handling capabilities.
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How does the transistor die format benefit circuit design compared to packaged transistors?
The bare die format reduces parasitic capacitances and inductances, allowing faster switching speeds and improved thermal conduction. It also enables more compact PCB layouts, making it ideal for space-sensitive and high-frequency designs.
What temperature range can this transistor die reliably operate within?
This transistor die is rated for operation from -55??C to +150??C, providing excellent thermal stability for harsh industrial environments and extended device lifespan.
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Is this transistor die suitable for high-frequency amplifier applications?
Yes, with a transition frequency of 100 MHz and a gain bandwidth product of 50 MHz, the device supports high-frequency amplification with stable gain and low distortion.
What precautions should be taken when handling the transistor die during assembly?
Being a bare silicon die, it requires careful handling to avoid mechanical damage and contamination. Proper ESD protection and cleanroom assembly conditions are recommended to maintain device integrity and performance.
