JANKCBP2N3440-Transistor-Die Overview
The JANKCBP2N3440-Transistor-Die is a high-performance bipolar junction transistor (BJT) die designed for demanding industrial and electronic applications. It offers robust electrical characteristics, including high current gain and voltage tolerance, making it suitable for amplification and switching tasks in semiconductor circuits. Its compact die format simplifies integration into custom modules and hybrid circuits, enhancing design flexibility. Engineered for reliability and consistent performance, this transistor die supports efficient power management and signal processing. For sourcing and detailed technical data, visit the IC Manufacturer website.
JANKCBP2N3440-Transistor-Die Key Features
- High Current Gain: Ensures efficient signal amplification while minimizing input drive requirements, improving overall circuit sensitivity.
- Robust Voltage Handling: Supports collector-emitter voltages suitable for moderate power applications, providing operational stability under varying loads.
- Compact Die Format: Facilitates seamless integration into hybrid and multi-chip modules, reducing footprint and enabling custom semiconductor assembly.
- Thermal Stability: Maintains consistent performance across a broad temperature range, enhancing reliability in industrial environments.
JANKCBP2N3440-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 7 A |
| Power Dissipation (Ptot) | 40 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 100 MHz |
| Package Type | Transistor Die (bare die format) |
| Operating Temperature Range | -65??C to +200??C |
| Emitter-Base Voltage (VEBO) | 5 V |
| Storage Temperature Range | -65??C to +200??C |
JANKCBP2N3440-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current handling and voltage rating compared to standard discrete BJTs, enabling enhanced power efficiency and circuit reliability. Its bare die configuration allows for more flexible integration into custom semiconductor assemblies, reducing parasitic losses common in packaged devices. Additionally, its wide operating temperature range ensures stable performance in harsh industrial environments, making it a reliable choice over typical packaged transistors.
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Typical Applications
- Power amplification in industrial control circuits where high current and voltage tolerance are required, ensuring effective signal processing and output drive.
- Switching elements in power supplies, leveraging its fast switching capabilities and robust current handling.
- Hybrid integrated circuits, benefiting from the compact die form for efficient multi-chip module assembly.
- High-frequency amplifier stages in telecommunications equipment, utilizing its favorable transition frequency for signal integrity.
JANKCBP2N3440-Transistor-Die Brand Info
The JANKCBP2N3440 transistor die is produced by JANKC, a reputed supplier specializing in high-quality semiconductor components tailored for industrial and electronic engineering markets. This product exemplifies the brand??s commitment to delivering reliable, high-performance transistor dies suitable for demanding applications. JANKC supports comprehensive product documentation and sourcing services, ensuring engineers and procurement specialists have access to precise technical data and supply chain reliability.
FAQ
What type of transistor is the JANKCBP2N3440-Transistor-Die?
The device is an NPN bipolar junction transistor (BJT) offered in a bare die format. This type is commonly used for amplification and switching functions within electronic circuits.
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What are the voltage and current ratings of this transistor die?
The collector-emitter voltage rating is 60 V, and the maximum collector current is 7 A, making it suitable for moderate power industrial applications requiring reliable current handling.
How does the bare die format benefit circuit integration?
Being in a bare die format, the transistor allows for direct incorporation into hybrid modules or custom semiconductor assemblies, reducing package-induced parasitic effects and enabling more compact circuit designs.
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What is the operating temperature range of this transistor die?
The device supports an operating temperature range from -65??C to +200??C, ensuring stable performance in harsh or thermally demanding environments such as industrial or automotive applications.
What applications are best suited for this transistor die?
This transistor die is ideal for power amplification, switching in power supplies, hybrid integrated circuits, and high-frequency amplification in telecommunications, offering versatility across various industrial electronics fields.
