JANTX2N3879-Transistor Overview
The JANTX2N3879 is a high-performance NPN bipolar junction transistor engineered for demanding power amplification and switching applications. Designed to deliver robust current handling and reliable operation under elevated voltages, this transistor is suitable for military and industrial electronics where durability and precision are critical. Featuring a high collector-emitter voltage rating and substantial collector current capacity, it supports applications requiring stable gain and consistent performance. The device??s hermetically sealed metal can package enhances long-term reliability in harsh environments. For sourcing and detailed technical information, visit IC Manufacturer.
JANTX2N3879-Transistor Key Features
- High Voltage Handling: Supports collector-emitter voltages up to 100V, ensuring compatibility with high-voltage circuits and reducing risk of breakdown.
- Robust Collector Current: Capable of continuous collector current up to 10A, enabling effective power switching and amplification in demanding applications.
- Hermetic Metal Can Package: Provides improved thermal conductivity and environmental protection, enhancing device reliability in rugged conditions.
- High DC Current Gain (hFE): Offers a gain range from 40 to 160, allowing designers to optimize amplification and signal integrity.
JANTX2N3879-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | – |
| Collector-Emitter Voltage (VCEO) | 100 | Volts |
| Collector-Base Voltage (VCBO) | 140 | Volts |
| Emitter-Base Voltage (VEBO) | 5 | Volts |
| Collector Current (IC) | 10 | Amperes |
| Power Dissipation (Ptot) | 115 | Watts |
| DC Current Gain (hFE) | 40 ?C 160 | Unitless |
| Transition Frequency (fT) | 5 | MHz |
| Operating Junction Temperature | -65 to +200 | ??C |
JANTX2N3879-Transistor Advantages vs Typical Alternatives
This transistor delivers superior voltage and current ratings compared to standard BJTs, making it ideal for high-power, high-reliability applications. Its hermetic metal package outperforms plastic encapsulated alternatives in thermal management and environmental resistance, reducing failure rates. With a wide gain range and robust power dissipation capability, it offers enhanced design flexibility and dependable performance in industrial and military electronics.
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Typical Applications
- Power amplifier stages in communication and radar systems, where high voltage and current handling are essential for signal integrity and reliability.
- Switching regulators and power control circuits requiring robust current capacity and thermal endurance.
- Industrial motor control circuits that demand high power dissipation and transient tolerance.
- Military-grade electronic modules, benefiting from the transistor’s hermetic packaging and broad operating temperature range.
JANTX2N3879-Transistor Brand Info
The JANTX2N3879 is a military-grade transistor manufactured under stringent quality and reliability standards. It is produced using advanced fabrication processes to meet defense and aerospace requirements. This product line is recognized for consistent performance in harsh environments and is widely trusted by engineers designing mission-critical electronic systems. Its brand legacy reflects a commitment to durability, precise electrical characteristics, and long-term availability.
FAQ
What type of transistor is the JANTX2N3879?
The device is an NPN bipolar junction transistor designed for power amplification and switching. It is optimized for handling high collector currents and voltages, making it suitable for rugged industrial and military applications.
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What is the maximum collector current rating of this transistor?
This transistor supports continuous collector current up to 10 amperes, allowing it to manage substantial power loads in demanding electronic circuits without compromising reliability.
How does the hermetic metal can package benefit the transistor??s performance?
The hermetic metal can package offers enhanced thermal conductivity and protection against moisture, dust, and other contaminants. This packaging improves device longevity and stability, especially in harsh or high-temperature environments.
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What is the safe operating voltage range for this transistor?
The transistor can safely operate with collector-emitter voltages up to 100 volts and collector-base voltages up to 140 volts, providing ample margin for high-voltage circuit designs.
In which applications is this transistor most commonly used?
It is frequently used in power amplifier stages, motor control circuits, switching regulators, and military-grade electronics where reliability under extreme conditions and high power handling are essential.
