JANTX2N3868S-Transistor by JAN | NPN Power Transistor | TO-3 Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Featuring a high voltage rating, it supports reliable operation under demanding electrical conditions.
  • Its compact package design allows for board-space savings in dense electronic assemblies.
  • Ideal for power regulation in industrial equipment, it ensures stable performance during load changes.
  • Manufactured to meet strict quality standards, it offers consistent reliability over extended use.
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JANTX2N3868S-Transistor Overview

The JANTX2N3868S is a high-power NPN bipolar junction transistor designed for robust switching and amplifier applications in industrial and military-grade environments. Built to meet stringent JAN (Joint Army-Navy) standards, this transistor delivers reliable performance under elevated temperature and harsh conditions. It features a high collector current capacity and voltage rating, making it suitable for demanding circuits requiring durability and consistent gain. Engineers and sourcing specialists recognize this component for its proven ruggedness and compatibility in precision analog and power control systems. For detailed sourcing and technical resources, visit IC Manufacturer.

JANTX2N3868S-Transistor Key Features

  • High Collector-Emitter Voltage (VCEO): Supports up to 60 V, enabling operation in high-voltage switching and amplification circuits.
  • Maximum Collector Current (IC) of 10 A: Allows for handling substantial current loads, critical for power amplification and motor control.
  • Low Saturation Voltage: Enhances efficiency by minimizing power dissipation during switching, thus improving thermal management.
  • JAN Military Specification Compliance: Ensures reliability and consistent performance in rugged and mission-critical applications.

JANTX2N3868S-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 10 A
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 40?C160 ??
Transition Frequency (fT) 20 MHz
Operating Junction Temperature (TJ) +200 ??C

JANTX2N3868S-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its rugged JAN specification compliance, offering superior reliability and thermal tolerance compared to standard commercial-grade transistors. Its high collector current and voltage ratings provide enhanced power handling, while low saturation voltage improves efficiency in high-power switching applications. These factors make it a preferred choice for engineers seeking durable and precise performance in demanding industrial and military environments.

Typical Applications

  • Power Amplifiers: Ideal for medium to high power audio and RF amplification circuits requiring stable gain and high current capacity.
  • Switching Regulators: Suitable for use in DC-DC converters where efficient high-current switching is critical.
  • Motor Control: Enables precise control of motors in industrial automation systems due to its robust current and voltage handling.
  • Military and Aerospace Systems: Designed to meet rigorous environmental standards for use in defense-grade electronic assemblies.

JANTX2N3868S-Transistor Brand Info

The JANTX2N3868S transistor is manufactured under the JAN (Joint Army-Navy) standard, recognized for its stringent quality and reliability criteria. This designation ensures the device meets military-grade specifications for performance, durability, and thermal endurance. The product is widely trusted by engineers for applications requiring enhanced ruggedness, including aerospace and defense electronics. Its consistent manufacturing process and thorough testing protocols guarantee dependable operation in critical environments.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 10 amperes, allowing the device to handle significant current loads in power amplification and switching applications without compromising reliability.

Can this transistor operate at high temperatures?

Yes, the device is rated for an operating junction temperature up to +200??C, making it suitable for high-temperature environments commonly encountered in industrial and military applications.

What voltage levels can this transistor safely handle?

It can withstand collector-emitter voltages up to 60 volts and collector-base voltages up to 80 volts, providing robust tolerance for medium- to high-voltage circuits.

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产品中间询盘

Is this transistor suitable for RF amplification?

With a transition frequency (fT) of 20 MHz, it can be used in certain RF amplification scenarios, particularly in medium frequency ranges, although it is primarily designed for power amplification and switching.

What does the JAN designation mean for this transistor?

The JAN designation indicates compliance with Joint Army-Navy military standards, ensuring higher reliability, quality control, and ruggedness compared to commercial-grade transistors, making it ideal for mission-critical applications.

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