JAN2N2920L-Dual-Transistor Overview
The JAN2N2920L dual transistor is a rugged, reliable semiconductor device designed for high-performance switching and amplification applications. This dual transistor combines two NPN transistors within a single package, optimized for military and industrial use, offering enhanced thermal stability and electrical consistency. Its robust construction ensures dependable operation in demanding environments, making it ideal for precision signal processing and power control tasks. Engineers and sourcing specialists will appreciate the device??s proven reliability and compatibility with a range of electronic circuits. For detailed sourcing and technical support, visit IC Manufacturer.
JAN2N2920L-Dual-Transistor Key Features
- Dual NPN transistor configuration: Enables compact circuit design by integrating two transistors in one package, reducing board space and simplifying assembly.
- High voltage capability: Supports collector-emitter voltages up to 100V, allowing operation in various high-voltage switching applications.
- Guaranteed gain characteristics: Provides consistent current gain (hFE), ensuring predictable amplification performance across devices.
- Military-grade ruggedness: Complies with JAN (Joint Army-Navy) standards for enhanced reliability under extreme conditions.
JAN2N2920L-Dual-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Dual Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector Current (IC) | 600 mA |
| Power Dissipation (PC) | 800 mW |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 85 to 300 |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -55??C to +200??C |
| Transition Frequency | 100 MHz |
JAN2N2920L-Dual-Transistor Advantages vs Typical Alternatives
This dual transistor offers superior integration by housing two matched transistors in a single TO-18 package, reducing component count and board complexity. Its high voltage rating and wide operating temperature range provide enhanced reliability compared to standard single transistors. The device’s consistent gain parameters and military-grade construction ensure dependable performance in critical applications, making it a preferred choice over typical discrete transistor alternatives.
🔥 Best-Selling Products
Typical Applications
- High-frequency switching circuits requiring matched transistor pairs for balanced amplification or switching tasks in industrial control systems.
- Signal amplification in communication equipment where stable gain and low noise are essential.
- Power management circuits where reliable transistor operation at elevated temperatures is mandatory.
- Military and aerospace electronic devices requiring rugged components with proven performance under harsh environmental conditions.
JAN2N2920L-Dual-Transistor Brand Info
The JAN2N2920L dual transistor is manufactured under strict Joint Army-Navy (JAN) specifications, ensuring high reliability and quality for defense and aerospace applications. This product reflects the brand??s commitment to delivering rugged semiconductor devices that meet stringent military standards. The metal can TO-18 package and rigorous testing protocols guarantee consistent performance, making this transistor a trusted component for engineers designing mission-critical electronic systems.
FAQ
What is the maximum collector current for the JAN2N2920L dual transistor?
The maximum collector current for this dual transistor is 600 milliamperes (mA). This rating ensures the device can handle moderate power loads while maintaining reliable operation within its specified thermal limits.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Can the JAN2N2920L operate at high temperatures?
Yes, it is rated for operation across a wide temperature range from -55??C up to +200??C. This makes it suitable for use in harsh environments such as military and industrial applications where thermal extremes are common.
What package type does this dual transistor use?
The device is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, contributing to its durability and reliability in demanding applications.
📩 Contact Us
How does the gain (hFE) vary across devices?
The DC current gain (hFE) for this transistor ranges from 85 to 300, offering a consistent performance window. This helps designers predict circuit behavior and maintain signal integrity in amplification tasks.
Is the JAN2N2920L suitable for high-frequency applications?
Yes, with a typical gain bandwidth product (fT) of 100 MHz, this dual transistor supports high-frequency switching and amplification, making it a viable choice for RF and communication circuit designs.
