2N5667-Transistor by ON Semiconductor | NPN Amplifier Transistor | TO-18 Package

2N5667-Transistor Overview

The 2N5667 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Engineered to handle collector currents up to 3A and a maximum collector-emitter voltage of 60V, it offers robust power handling capabilities in a TO-39 metal can package. Its medium power rating combined with reliable gain characteristics makes it suitable for industrial and communication equipment. This transistor delivers consistent performance under varying temperature conditions, ensuring operational stability. For quality assurance and detailed technical support, visit IC Manufacturer.

2N5667-Transistor Key Features

• High Collector Current Capacity: Supports up to 3A, enabling effective handling of moderate power loads in amplifier and switching circuits.
• Moderate Voltage Rating: Collector-emitter voltage rating of 60V ensures reliable operation in a wide range of industrial environments.
• TO-39 Metal Can Package: Provides enhanced thermal dissipation and mechanical durability, improving device reliability in harsh conditions.
• Stable Gain Performance: Offers consistent DC current gain (hFE) over temperature variations, critical for precise amplification tasks.

2N5667-Transistor Technical Specifications

2N5667-Transistor Advantages vs Typical Alternatives

This transistor excels over standard alternatives by combining a higher collector current rating with a robust 60V voltage tolerance, enabling it to operate reliably in demanding industrial circuits. Its metal can TO-39 package offers superior thermal management compared to plastic encapsulated transistors, enhancing durability and long-term stability. Additionally, the wide DC gain range allows for flexible circuit design, making it a preferred choice for engineers requiring both power and precision.

Typical Applications

• Audio Amplifiers: The device??s high current handling and stable gain make it ideal for driving medium-power audio amplification stages in professional audio equipment.
• Switching Regulators: Suitable for use in DC-DC converter circuits where efficient switching and thermal stability are critical.
• Industrial Controls: Used in relay drivers and other control circuits requiring robust transistor switching under varying load conditions.
• Communication Equipment: Effective in RF preamplifier and driver stages where moderate frequency response and power handling are necessary.

2N5667-Transistor Brand Info

The 2N5667 transistor is a well-established product widely manufactured by several semiconductor suppliers to meet industrial-grade requirements. Its consistent quality and reliable performance have made it a staple component in electronic design and manufacturing. The device is typically offered in a TO-39 metal can package, ensuring enhanced heat dissipation and mechanical protection. This transistor is supported by comprehensive datasheets and application notes from reputable IC Manufacturer partners, providing engineers with the necessary resources for effective integration.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for the device is 3 amperes. This enables it to handle moderate power loads, making it suitable for a variety of amplifier and switching applications that require robust current capacity.

What package type does this transistor use, and why is it important?

This transistor comes in a TO-39 metal can package. The metal can design provides superior thermal dissipation and mechanical durability compared to plastic packages, which improves reliability in high-power or harsh environmental conditions.

Can this transistor be used in high-frequency circuits?

Yes, with a transition frequency (fT) of approximately 40 MHz, it is capable of functioning effectively in moderate frequency applications, such as RF preamplifiers and driver stages within communication equipment.

What voltage limits should be considered when designing with this transistor?

The maximum collector-emitter voltage rating is 60V, and the collector-base voltage rating is 80V. Designers should ensure these voltage limits are not exceeded to maintain device reliability and avoid breakdown.

How does the DC current gain vary for this transistor?

The DC current gain (hFE) ranges broadly from 70 to 700 depending on operating conditions and manufacturing variance. This wide gain range allows flexibility in circuit design but requires attention to ensure consistent amplification performance.