JAN2N2919-Dual-Transistor by JAN | High-Performance Amplifier | TO-92 Package

  • This transistor pair enables efficient signal amplification, improving circuit performance and response time.
  • The device supports moderate current handling, ensuring stable operation in typical electronic applications.
  • Its compact package reduces board space, facilitating integration into space-constrained designs.
  • Ideal for audio amplification circuits, it helps deliver clear sound output with minimal distortion.
  • Manufactured to meet standard reliability criteria, it ensures consistent functionality over extended use.
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产品上方询盘

JAN2N2919-Dual-Transistor Overview

The JAN2N2919-Dual-Transistor is a high-performance, complementary NPN transistor pair designed for industrial and military-grade applications. Engineered to offer reliable switching and amplification, this dual-transistor package integrates two matched NPN transistors with a maximum collector current of 800mA and a collector-emitter voltage rating of 40V. It supports moderate power dissipation up to 625mW, ensuring robustness under demanding electrical loads. This transistor pair is ideal for applications requiring consistent gain and switching speed with enhanced thermal stability. Available through IC Manufacturer, it meets stringent quality standards for dependable operation in complex electronic circuits.

JAN2N2919-Dual-Transistor Key Features

  • Dual NPN transistor configuration: Enables compact circuit design by integrating two matched transistors in a single package, reducing board space.
  • High collector current capability (800mA): Supports efficient switching and amplification in medium-power applications, ensuring reliable operation under load.
  • Collector-emitter voltage rating of 40V: Provides adequate voltage handling for various industrial signal processing and power management tasks.
  • Power dissipation up to 625mW: Enhances thermal reliability, allowing sustained performance in environments with elevated temperatures.

JAN2N2919-Dual-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 – 300 Typical
Transition Frequency (fT) 100 MHz
Package Type TO-18 Metal Can ?C

JAN2N2919-Dual-Transistor Advantages vs Typical Alternatives

This dual-transistor device offers enhanced integration by combining two matched NPN transistors within a single TO-18 package, significantly reducing circuit complexity and board footprint compared to discrete transistor setups. Its robust current and voltage ratings deliver reliable performance with improved thermal management, making it a superior choice over typical single-transistor components in precision amplification and switching tasks. The dual configuration also ensures closely matched transistor characteristics, enhancing signal fidelity and overall circuit stability.

Typical Applications

  • Signal amplification circuits in industrial control systems, where matched transistor pairs ensure consistent gain and low distortion over temperature variations.
  • Switching devices in power management modules requiring reliable high-current handling and fast response times.
  • Driver stages for relay and solenoid actuators, benefiting from robust collector current and voltage ratings.
  • General purpose audio amplification circuits that demand low noise and stable gain characteristics from transistor pairs.

JAN2N2919-Dual-Transistor Brand Info

The JAN2N2919-Dual-Transistor is produced under the JAN (Joint Army-Navy) specification, ensuring military-grade quality and reliability. This product is widely recognized for its consistent performance in rugged environments and stringent applications. The metal TO-18 package design offers excellent thermal dissipation and mechanical robustness, making it a preferred choice among engineers for demanding industrial and defense electronics. Its matched transistor pair configuration supports precise circuit design with reduced component count.

FAQ

What is the maximum collector current rating of this dual transistor?

The maximum collector current for each transistor in this dual package is rated at 800mA, enabling it to handle medium-power switching and amplification tasks reliably without risk of damage under specified operating conditions.

How does the power dissipation rating affect device performance?

With a total power dissipation rating of 625mW, the device can sustain moderate thermal loads, helping to maintain stable operation and prevent thermal runaway in circuits exposed to elevated temperatures or continuous operation.

What packaging type does this dual transistor use and why is it important?

This transistor pair is housed in a TO-18 metal can package, which provides excellent heat dissipation and mechanical protection. This packaging enhances reliability, especially in industrial and military environments where durability is critical.

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产品中间询盘

Can this transistor be used in audio amplification circuits?

Yes, the matched transistor pair and stable gain characteristics make it suitable for audio amplification applications requiring low noise and consistent performance across temperature ranges.

What voltage levels can the device safely handle between collector and emitter?

The maximum collector-emitter voltage (VCEO) rating is 40 volts, allowing the transistor to operate safely within circuits that do not exceed this voltage, ensuring device integrity and longevity.

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