JANTX2N3867S-Transistor by JAN – High Power NPN Transistor, TO-3 Package

JANTX2N3867S-Transistor Overview

The JANTX2N3867S is a high-power NPN bipolar junction transistor (BJT) designed for reliable amplification and switching in demanding industrial and military applications. Engineered to meet stringent military standards, this device offers robust performance with a collector-emitter voltage rating of 100 V and a collector current capability of 10 A. Its low saturation voltage and high gain ensure efficient power handling and signal integrity under harsh operating conditions. Ideal for use in power amplifier stages, switching regulators, and motor control circuits, this transistor delivers consistent, long-term reliability. For detailed sourcing and specifications, visit IC Manufacturer.

JANTX2N3867S-Transistor Key Features

• High Collector Current (10 A): Enables handling of significant power loads, critical for industrial switching and amplification tasks.
• Collector-Emitter Voltage (100 V): Supports high-voltage applications ensuring robust operation in power supply and motor control circuits.
• Military-Grade Quality: Manufactured to meet JAN (Joint Army-Navy) standards, guaranteeing superior reliability and durability in extreme environments.
• Low Saturation Voltage: Minimizes power loss during switching, increasing overall circuit efficiency and thermal management.

JANTX2N3867S-Transistor Technical Specifications

JANTX2N3867S-Transistor Advantages vs Typical Alternatives

This transistor stands out for its military-grade construction, delivering superior reliability under thermal and electrical stress compared to standard commercial devices. Its high collector current capacity and voltage ratings provide enhanced robustness, while the low saturation voltage reduces power losses. These features enable engineers to design more efficient, durable power amplification and switching systems, especially in mission-critical industrial and defense applications.

Typical Applications

• Power Amplification: Ideal for high-power audio and radio frequency amplifiers requiring reliable, linear gain under demanding conditions.
• Switching Regulators: Suitable for use in DC-DC converters and power supply regulation where efficient high-current switching is necessary.
• Motor Control Circuits: Enables precise driving of motors in industrial automation systems with high current and voltage requirements.
• Military and Aerospace Electronics: Designed to withstand harsh environments, making it suitable for avionics and defense-grade electronics.

JANTX2N3867S-Transistor Brand Info

The JANTX2N3867S is part of the Joint Army-Navy (JAN) series of transistors, representing a standard for military-grade semiconductor devices. Manufactured to rigorous specifications, this transistor ensures exceptional performance consistency and durability. Its TO-3 metal package provides enhanced heat dissipation and mechanical stability, aligning with the stringent requirements of defense and aerospace sectors. Trusted by engineers for mission-critical applications, this product exemplifies reliability and robust engineering.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum continuous collector current of 10 amps, making it suitable for high-power applications that require significant current handling capability.

What voltage levels can the transistor safely operate at?

It has a maximum collector-emitter voltage rating of 100 volts and a collector-base voltage of 120 volts, allowing it to operate safely in high-voltage circuits without risk of breakdown.

What type of package does this transistor use and why is it important?

This device is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical robustness, essential for maintaining stability and reliability in high-power, high-temperature environments.

How does the DC current gain affect circuit design with this transistor?

The DC current gain (hFE) ranges from 40 to 160 at 4 amps collector current, which influences signal amplification levels and biasing requirements, allowing engineers to optimize circuit performance based on gain characteristics.

Is this transistor suitable for use in aerospace or military applications?

Yes, it is qualified to meet Joint Army-Navy (JAN) standards, ensuring it can withstand harsh environmental conditions such as extreme temperatures and mechanical stress, making it ideal for aerospace and defense electronics.