JANTX2N5667-Transistor Overview
The JANTX2N5667 is a high-reliability, silicon NPN bipolar junction transistor designed for applications requiring robust power handling and switching performance. Rated for collector-emitter voltages up to 100 V and a collector current maximum of 10 A, it supports medium-power amplification and switching tasks in industrial and military-grade environments. Its JAN (Joint Army-Navy) qualification ensures stringent manufacturing and quality standards, making it suitable for critical aerospace, defense, and rugged industrial electronics. Sourced from IC Manufacturer, this transistor offers dependable thermal stability and consistent electrical performance under demanding conditions.
JANTX2N5667-Transistor Key Features
- High collector current capacity: Supports up to 10 A, enabling efficient switching and amplification in medium-power circuits.
- Collector-emitter voltage rating of 100 V: Suitable for applications requiring moderate voltage tolerance, enhancing circuit design flexibility.
- JAN military specification compliance: Ensures superior reliability and quality control, critical for aerospace and defense systems.
- Low saturation voltage: Improves power efficiency by reducing conduction losses during switching operations.
- Robust thermal characteristics: Allows operation at junction temperatures up to 200??C, supporting reliable performance in harsh environments.
- TO-3 metal can package: Offers excellent heat dissipation and mechanical durability for industrial applications.
JANTX2N5667-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector Current (Ic) | 10 A (max) |
| Power Dissipation (Pd) | 125 W (max) at 25??C |
| DC Current Gain (hFE) | 20 to 70 (at Ic = 4 A) |
| Transition Frequency (fT) | 15 MHz (typical) |
| Junction Temperature (Tj) | ?65??C to +200??C |
| Base-Emitter Voltage (Vbe(on)) | 1.2 V (typical) |
| Package Type | TO-3 Metal Can |
JANTX2N5667-Transistor Advantages vs Typical Alternatives
This transistor offers a combination of high current capacity and voltage rating within a rugged, thermally efficient TO-3 package. Compared to typical low-power transistors, it delivers greater power handling and enhanced thermal stability. Its JAN military qualification ensures tighter manufacturing tolerances and reliability, making it a preferred choice for critical industrial and defense applications where failure is not an option.
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Typical Applications
- Power amplification stages in industrial control circuits where high current and voltage are required, ensuring reliable performance under demanding conditions.
- Switching regulators and power converters that benefit from low saturation voltage and robust thermal handling.
- Military and aerospace electronics requiring components with rigorous quality certifications and long-term reliability.
- Industrial motor control and driver circuits where durable and high-current transistors improve efficiency and system stability.
JANTX2N5667-Transistor Brand Info
The JANTX2N5667 is part of the Joint Army-Navy (JAN) series, representing a high-grade transistor meeting military standards for durability and performance. Designed and manufactured under strict quality controls, this transistor is tailored for use in environments demanding exceptional reliability and consistency. Its brand heritage is rooted in meeting the stringent specifications essential for defense, aerospace, and harsh industrial applications, making it a trusted component for engineers and sourcing specialists worldwide.
FAQ
What does the JAN qualification of this transistor imply?
JAN qualification indicates that the transistor meets military-grade standards for quality and reliability. It undergoes rigorous testing and manufacturing controls to ensure performance under extreme environmental conditions, making it suitable for aerospace, defense, and other critical applications.
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What are the thermal limits of this transistor?
This device can operate at junction temperatures ranging from ?65??C up to +200??C, supporting reliable functionality even in harsh thermal environments typical of industrial and military electronics.
What type of package does this transistor use and why is it important?
The transistor is housed in a TO-3 metal can package, which provides excellent heat dissipation and mechanical protection. This packaging is crucial for maintaining thermal stability and ensuring long-term reliability in power handling applications.
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Can this transistor be used for high-frequency applications?
While it has a transition frequency of approximately 15 MHz, this transistor is primarily optimized for power amplification and switching rather than high-frequency RF applications. It performs best in medium-frequency power circuits.
What is the typical current gain (hFE) range for this transistor?
The DC current gain ranges from 20 to 70 at a collector current of 4 A, providing sufficient gain for power amplification and switching tasks in industrial and military circuits.
