JANTXV2N918UB-Transistor by JAN – High-Speed Switching Transistor, TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It features a voltage rating suitable for moderate power applications, ensuring stable performance under load.
  • The compact package reduces board space, facilitating integration into dense circuit designs.
  • Ideal for switching tasks in consumer electronics, improving device responsiveness and energy use.
  • Manufactured under strict quality controls, it offers consistent reliability in demanding environments.
Microchip Technology-logo
产品上方询盘

JANTXV2N918UB-Transistor Overview

The JANTXV2N918UB-Transistor is a high-performance silicon NPN bipolar junction transistor designed for switching and amplification applications. It features a low collector-emitter saturation voltage and high transition frequency, making it suitable for high-speed and low-noise circuits. Its military-grade JANTX (Joint Army-Navy) qualification ensures robust reliability and enhanced temperature tolerance under harsh conditions. Ideal for demanding industrial and aerospace environments, this transistor delivers consistent performance, longevity, and superior electrical characteristics. For sourcing and technical support, consult IC Manufacturer.

JANTXV2N918UB-Transistor Key Features

  • High transition frequency (fT): Enables fast switching speeds essential for RF and pulse amplification circuits.
  • Low collector-emitter saturation voltage (VCE(sat)): Reduces power dissipation for improved circuit efficiency.
  • Military-grade JANTX qualification: Guarantees reliability in extreme temperature and vibration conditions, ideal for aerospace and defense applications.
  • Complementary NPN configuration: Ensures compatibility with a wide range of circuit designs requiring reliable transistor operation.

JANTXV2N918UB-Transistor Technical Specifications

Parameter Value Unit
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 25 V
Collector-Base Voltage (VCBO) 30 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 50 mA
Power Dissipation (PD) 300 mW
Transition Frequency (fT) 250 MHz
DC Current Gain (hFE) 40 – 200
Operating Temperature Range -55 to +125 ??C
Package Type TO-18 Metal Can

JANTXV2N918UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and enhanced electrical performance under extreme environmental conditions compared to standard commercial transistors. Its military-grade qualification ensures greater temperature tolerance and durability, while the low saturation voltage and high transition frequency yield better efficiency and faster switching speeds. These attributes make it a preferred choice for precision amplification and switching tasks where stability and ruggedness are critical.

Typical Applications

  • High-frequency switching circuits requiring fast response and low noise, such as RF amplifiers and oscillators in military and aerospace systems.
  • Signal amplification in communication devices where stable gain and low distortion are essential.
  • Pulse circuits and driver stages in instrumentation and control equipment demanding reliable performance under harsh conditions.
  • General-purpose low-power amplification and switching in rugged industrial electronics operating over wide temperature ranges.

JANTXV2N918UB-Transistor Brand Info

The JANTXV2N918UB-Transistor is a certified military-grade component designed and manufactured to meet stringent Joint Army-Navy standards. This brand represents high-reliability discrete semiconductor devices tailored for defense, aerospace, and industrial applications. The product ensures consistent electrical characteristics, rigorous quality control, and extended operational life, making it suitable for mission-critical systems where failure is not an option.

FAQ

What type of transistor is the JANTXV2N918UB, and what are its basic electrical ratings?

The JANTXV2N918UB is an NPN bipolar junction transistor with a collector-emitter voltage rating of 25 volts, collector current up to 50 mA, and power dissipation of 300 mW. It operates reliably across a temperature range of -55 to +125??C, suitable for demanding environments.

How does the JANTXV2N918UB perform in high-frequency applications?

With a transition frequency (fT) of approximately 250 MHz, this transistor supports fast switching and amplification at radio frequencies, making it well-suited for RF circuits, oscillators, and high-speed signal processing.

What packaging does this transistor use, and how does it affect thermal performance?

This device is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical robustness. The metal can also enhances heat dissipation, contributing to stable operation under elevated temperature conditions.

📩 Contact Us

产品中间询盘

What are the typical applications where this transistor excels?

The transistor is ideal for high-frequency switching, signal amplification, and pulse circuit applications in aerospace, defense, and industrial electronics requiring ruggedness and consistent performance over wide temperature ranges.

Is the JANTXV2N918UB suitable for commercial and industrial applications?

Yes, while primarily designed to meet military standards, its robust characteristics and electrical specifications make it also suitable for industrial electronics where reliability and temperature tolerance are critical.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?