JANTX2N3766-Transistor Overview
The JANTX2N3766 is a high-power NPN silicon transistor designed for demanding industrial and military applications requiring robust switching and amplification capabilities. It features a collector current rating of up to 10A and a collector-emitter voltage of 100V, making it suitable for high-voltage operations. The device??s rugged construction ensures reliable performance under harsh environmental conditions, including elevated temperatures and mechanical stress. Ideal for use in power amplifiers, motor control circuits, and voltage regulation systems, this transistor delivers consistent gain and efficiency. For sourcing and detailed technical support, visit IC Manufacturer.
JANTX2N3766-Transistor Key Features
- High Collector Current Capacity: Supports continuous collector current up to 10A, enabling effective handling of high-power loads.
- High Voltage Endurance: With a collector-emitter voltage rating of 100V, this transistor is suitable for applications requiring substantial voltage margins.
- Robust Gain Characteristics: The device provides consistent DC current gain (hFE) ranging between 20 and 70, ensuring reliable amplification performance.
- Durable Package and Thermal Resistance: Constructed in a TO-3 metal case with a maximum junction temperature of 200??C, ensuring excellent heat dissipation and long-term reliability.
JANTX2N3766-Transistor Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | V |
| Collector-Base Voltage | VCBO | 140 | V |
| Emitter-Base Voltage | VEBO | 7 | V |
| Collector Current (Continuous) | IC | 10 | A |
| Power Dissipation | PD | 125 | W |
| DC Current Gain (hFE) | hFE | 20?C70 | ?? |
| Transition Frequency | fT | 6 | MHz |
| Junction Temperature | TJ | 200 | ??C |
| Storage Temperature Range | TSTG | -65 to +200 | ??C |
| Package Type | ?? | TO-3 | ?? |
JANTX2N3766-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and voltage ratings compared to standard general-purpose transistors. Its rugged TO-3 metal package enhances thermal management, allowing for higher dissipation and improved operational stability under stress. The wide gain range supports flexible circuit design, while its military-grade construction ensures reliability in critical applications. These features make it an excellent choice for engineers seeking durable, high-performance switching and amplification components.
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Typical Applications
- Power amplifiers in industrial and military communication systems, where consistent gain and high current handling are crucial for signal integrity and reliability.
- Motor control circuits requiring robust switching capabilities to manage high currents efficiently and safely.
- Voltage regulator circuits that benefit from stable gain and high voltage tolerance for effective power management.
- Switching power supplies and converters, where high collector current and power dissipation ratings ensure dependable performance under load.
JANTX2N3766-Transistor Brand Info
The JANTX2N3766 is a JANTX-series transistor, signifying its qualification for military and aerospace applications with stringent quality and reliability standards. Manufactured under strict processes, this device maintains high-performance consistency and durability across a wide range of operating conditions. It is trusted in sectors demanding long-term reliability and robust electrical characteristics, supported by comprehensive datasheets and technical documentation from established semiconductor manufacturers.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current rating is 10 amperes, enabling the device to handle substantial current loads for power amplification and switching applications.
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Can this transistor operate at high temperatures?
Yes, it is designed to operate with a maximum junction temperature of 200??C, making it suitable for high-temperature environments often encountered in industrial or military settings.
What package type does this transistor come in, and why is it beneficial?
This device is housed in a TO-3 metal package, which offers excellent thermal conductivity and mechanical robustness, aiding in heat dissipation and enhancing durability under stressful operating conditions.
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What is the typical DC current gain (hFE) range for this device?
The typical DC current gain ranges from 20 to 70, providing reliable amplification characteristics suitable for various power and signal applications.
Is the transistor suitable for switching power supplies and motor control?
Yes, its high collector current capacity, voltage ratings, and robust construction make it ideal for switching power supplies, motor control circuits, and other high-power industrial applications.
