2N3019SP-Transistor-PIND by 2N – High Gain NPN Transistor, TO-18 Metal Can Package

  • This transistor amplifies current efficiently, enabling signal boosting in electronic circuits for improved performance.
  • Featuring a standard gain parameter, it ensures stable amplification under varying input conditions.
  • The package design offers a compact footprint, allowing for effective board-space utilization in dense assemblies.
  • Ideal for audio signal processing, it enhances sound clarity by providing consistent amplification in amplifier stages.
  • Manufactured with quality control measures to maintain reliable operation and long device lifespan in typical environments.
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产品上方询盘

2N3019SP-Transistor-PIND Overview

The 2N3019SP-Transistor-PIND is a specialized phototransistor designed for high-sensitivity light detection applications. Engineered with precision, this device offers reliable performance in photodiode integrated (PIND) circuits, making it ideal for industrial and semiconductor sensing solutions. Its robust construction ensures stable operation under varying environmental conditions, providing consistent output signals for accurate electronic measurements. With its optimized spectral response and quick switching capability, it supports efficient photon-to-electron conversion, critical for optical sensing and detection systems. For detailed technical and sourcing information, please visit IC Manufacturer.

2N3019SP-Transistor-PIND Key Features

  • High sensitivity phototransistor: Enables precise detection of low-level light signals, improving measurement accuracy in optical circuits.
  • Integrated photodiode design: Reduces circuit complexity and enhances signal integrity by combining photodiode and transistor elements within a single package.
  • Stable performance across temperature ranges: Ensures reliable operation in industrial environments where thermal variations occur.
  • Fast response time: Supports rapid switching for dynamic light detection and real-time monitoring applications.

2N3019SP-Transistor-PIND Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 30 V
Emitter-Collector Voltage (VECO) 5 V
Collector Current (IC) 50 mA
Power Dissipation (Ptot) 300 mW
Current Gain (hFE) 100 – 300 ??
Rise Time 150 ns
Fall Time 200 ns
Operating Temperature Range -65 to +200 ??C

2N3019SP-Transistor-PIND Advantages vs Typical Alternatives

This phototransistor integrates a photodiode element, simplifying circuit design while improving signal fidelity compared to discrete alternatives. It offers a wide operating temperature range and fast switching times, enhancing reliability and responsiveness in demanding industrial environments. Its high current gain and low power dissipation make it efficient for precise light detection, outperforming standard transistors used in similar applications.

Typical Applications

  • Optical sensing systems requiring high sensitivity and fast response, such as light meters and photon counters in industrial automation.
  • Photodetection circuits in semiconductor testing and measurement equipment.
  • Light-activated switches and controls that rely on accurate illumination detection for operation.
  • Instrumentation for environmental monitoring where stable phototransistor performance is critical.

2N3019SP-Transistor-PIND Brand Info

The 2N3019SP-Transistor-PIND is manufactured by a leading semiconductor provider specializing in high-quality photodetection devices. This product reflects the brand??s commitment to precision engineering and robust reliability in industrial component manufacturing. Designed for seamless integration into complex sensing systems, it delivers consistent performance backed by thorough quality control and comprehensive datasheet support.

FAQ

What is the maximum collector current for this phototransistor?

The maximum collector current is rated at 50 mA, ensuring the device can handle moderate load currents typical in photodetection circuits without compromising its operational integrity.

Can this device operate in harsh temperature environments?

Yes, it supports an operating temperature range from -65??C up to +200??C, making it suitable for various industrial applications where ambient conditions may vary significantly.

What are the rise and fall times of this phototransistor?

The rise time is approximately 150 nanoseconds, and the fall time is around 200 nanoseconds, allowing quick switching and fast response to changes in light intensity.

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产品中间询盘

Does the phototransistor integrate a photodiode element?

Yes, the device features an integrated photodiode, which simplifies circuit design and improves signal quality by combining detection and amplification in a single package.

How does the current gain range affect its performance?

The current gain ranges from 100 to 300, which allows for efficient amplification of the detected light signal, enhancing sensitivity and enabling more precise electronic measurements.

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