JAN2N5667S-Transistor NPN Amplifier Transistor in TO-39 Package by JAN2N5667S

  • This transistor amplifies electrical signals, enabling efficient control of current in various circuits.
  • Featuring a key electrical parameter that ensures stable operation under typical load conditions.
  • The compact package design allows for easy integration, saving valuable board space in assemblies.
  • Ideal for use in switching and amplification tasks, improving overall circuit performance in practical applications.
  • Manufactured to meet standard quality controls, ensuring consistent reliability during operation.
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JAN2N5667S-Transistor Overview

The JAN2N5667S transistor is a high-performance bipolar junction transistor (BJT) designed for switching and amplification applications in industrial and military electronics. This device delivers reliable operation with robust voltage and current handling capabilities, making it suitable for demanding environments. Featuring a stable gain and low noise characteristics, it supports precision in signal processing and power management tasks. Built to meet stringent JAN (Joint Army-Navy) specifications, it ensures consistent quality and ruggedness essential for aerospace, defense, and industrial sectors. For detailed procurement and technical support, visit IC Manufacturer.

JAN2N5667S-Transistor Key Features

  • High Voltage Tolerance: With a collector-emitter voltage rating up to 60V, it supports robust operation in high-voltage circuits, enhancing design flexibility.
  • Reliable Current Handling: Capable of continuous collector current up to 600mA, ensuring dependable switching and amplification under load.
  • Stable Gain Performance: Offers consistent DC current gain (hFE) in the range of 40 to 160, critical for maintaining signal integrity in amplification stages.
  • Military-Grade Quality: Constructed to meet JAN standards, providing superior reliability and environmental resilience for harsh operating conditions.

JAN2N5667S-Transistor Technical Specifications

Parameter Specification
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
DC Current Gain (hFE) 40 to 160
Transition Frequency (fT) 80 MHz (typical)
Power Dissipation (Ptot) 1 W
Operating Temperature Range -65??C to +200??C

JAN2N5667S-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and voltage handling compared to standard commercial BJTs, making it ideal for industrial and military-grade applications. Its wide operating temperature range and stringent JAN certification ensure stable performance under harsh conditions where typical alternatives might fail. The consistent gain and higher current capacity facilitate efficient power management and precise signal amplification, giving it a distinct advantage in critical electronics systems.

Typical Applications

  • Signal amplification and switching in aerospace and defense electronic circuits, where ruggedness and reliability are paramount.
  • Industrial control systems requiring robust transistors capable of handling moderate power loads and voltage stresses.
  • High-reliability communication equipment operating in extreme environmental conditions.
  • Power management and driver circuits in military-grade electronic assemblies.

JAN2N5667S-Transistor Brand Info

The JAN2N5667S transistor is manufactured under strict JAN (Joint Army-Navy) standards, reflecting a legacy of durability and quality in semiconductor components. This product is part of a specialized line designed for demanding applications in defense and aerospace industries. Its brand reputation centers on compliance with rigorous testing protocols, ensuring performance consistency and long-term reliability. Customers can expect robust device construction and dependable electrical characteristics suited for mission-critical systems.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current rating is 600 milliamps (mA), allowing the device to handle moderate power loads in switching or amplification applications without compromising performance.

Can this transistor operate in extreme temperature environments?

Yes, it supports an operating temperature range from -65??C to +200??C, making it well-suited for extreme environmental conditions typical in military and aerospace applications.

What type of transistor is it and what are its typical applications?

This is an NPN bipolar junction transistor (BJT) designed primarily for switching and amplification tasks, commonly used in industrial control, communication equipment, and defense electronics.

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How does the transistor??s gain affect its use in circuits?

The DC current gain (hFE) ranges between 40 to 160, providing stable and predictable amplification, which is crucial for maintaining signal integrity and consistent circuit behavior in precision electronics.

Is the JAN2N5667S suitable for high-frequency applications?

With a typical transition frequency around 80 MHz, this transistor can be utilized in moderate frequency amplifier stages, making it applicable to a range of signal processing and communication circuits.

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