2N3767-Transistor by ON Semiconductor – High-Power NPN Transistor, TO-3 Package

2N3767-Transistor Overview

The 2N3767 is a high-power NPN bipolar junction transistor (BJT) designed for demanding industrial and electronic applications. It features a robust collector current capacity and high voltage tolerance, making it suitable for power amplification and switching tasks. With a collector current rating of 10A and a collector-emitter voltage of 60V, this transistor reliably handles significant power dissipation. Its construction supports efficient heat management, ensuring operational stability under high current loads. Engineers and sourcing specialists will find it a dependable choice for rugged and high-performance circuits across various industrial sectors. For more details, visit IC Manufacturer.

2N3767-Transistor Key Features

• High Collector Current Capacity: Supports up to 10A, enabling effective handling of high power loads in amplification and switching circuits.
• High Voltage Rating: Collector-emitter voltage up to 60V ensures compatibility with medium-voltage industrial applications.
• Power Dissipation: Maximum power dissipation of 115W allows for reliable operation under demanding thermal conditions.
• Amplification Efficiency: Current gain (hFE) range of 20 to 70 provides consistent gain for linear amplification tasks.

2N3767-Transistor Technical Specifications

2N3767-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high current handling and power dissipation compared to many standard NPN BJTs. Its ability to operate reliably at elevated temperatures and voltages makes it a preferred choice for power amplification and switching in rugged environments. The robust design ensures enhanced reliability and longevity, reducing maintenance costs and improving system uptime in industrial applications.

Typical Applications

• Power Amplification: Ideal for audio and RF power amplifier stages requiring high current output with stable gain.
• Switching Circuits: Suitable for high-current switching in industrial control and automation systems.
• Motor Control: Used in controlling DC motors where reliable high-current capability is essential.
• Power Supplies: Effective in linear and switching power supplies to manage load regulation and switching tasks.

2N3767-Transistor Brand Info

The 2N3767 transistor is a well-established industrial semiconductor device manufactured by leading IC suppliers specializing in power transistors. It is recognized for its durability and consistent performance in applications demanding high current and voltage ratings. The product is packaged to facilitate heat dissipation and ease of integration into various electronic assemblies, aligning with industry standards for power transistors.

FAQ

What type of transistor is the 2N3767?

It is an NPN bipolar junction transistor (BJT) designed for high-power applications. This type of transistor uses electron flow for conduction and is commonly used in amplification and switching circuits requiring significant current handling.

What is the maximum collector current the device can handle?

The maximum continuous collector current rating is 10 amperes, making it suitable for power circuits that demand high load currents without compromising device integrity.

What voltage ratings should be considered when designing with this transistor?

The maximum collector-emitter voltage is 60 volts, and the collector-base voltage can withstand up to 100 volts. These ratings help ensure safe operation within specified voltage limits in various circuit designs.

How does the power dissipation rating affect transistor performance?

With a maximum power dissipation of 115 watts, the transistor can operate under high thermal stress. Proper heat sinking is required to maintain junction temperatures within safe limits and ensure reliable performance over time.

Is the 2N3767 suitable for high-frequency applications?

The transistor is primarily designed for power amplification and switching at lower to moderate frequencies. Its transition frequency is not specified for high-frequency RF applications, so it is best suited for audio and industrial power stages rather than microwave or GHz range circuits.