JANTXV2N5682-Transistor by JANTX | High-Speed Switching Transistor | TO-220 Package

  • This transistor controls current flow efficiently, enabling precise switching and amplification in circuits.
  • It features a voltage rating suitable for robust operation under varying electrical loads.
  • The compact package design allows for board-space savings in dense electronic assemblies.
  • Ideal for use in signal processing applications where stable performance is critical for system accuracy.
  • Manufactured to meet standard reliability criteria, ensuring consistent operation over time.
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JANTXV2N5682-Transistor Overview

The JANTXV2N5682 transistor is a high-performance bipolar junction transistor (BJT) designed for demanding industrial and military-grade applications. It features a robust junction isolation and is optimized for switching and amplification tasks under harsh conditions. With a high voltage rating and reliable gain characteristics, this transistor is well-suited for use in power regulation, signal amplification, and control circuits requiring ruggedness and long-term stability. Manufactured to meet stringent quality standards, it ensures dependable operation in environments where precision and durability are critical. For detailed industrial-grade semiconductor solutions, visit IC Manufacturer.

JANTXV2N5682-Transistor Key Features

  • High voltage capability: Supports collector-emitter voltages up to 60V, allowing use in medium-power switching applications.
  • Reliable current gain (hFE): Maintains stable DC gain across the specified operating range, ensuring consistent amplification performance.
  • Robust junction isolation: Enhances device reliability and reduces leakage currents, vital for industrial and military environments.
  • Wide operating temperature range: Performs efficiently in extreme temperatures, supporting rugged application demands.

JANTXV2N5682-Transistor Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Power Dissipation (Ptot) 1.5 W
DC Current Gain (hFE) 40 to 320 Unitless
Transition Frequency (fT) 100 MHz
Operating Temperature Range -55 to +200 ??C

JANTXV2N5682-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage ratings, enhanced gain stability, and rugged junction isolation compared to typical BJTs. Its ability to operate reliably over a wide temperature range makes it ideal for harsh industrial and military environments. The high power dissipation rating and robust construction ensure long-term stability, providing engineers with a dependable solution that outperforms many standard transistors in terms of sensitivity, reliability, and integration into complex electronic systems.

Typical Applications

  • Power amplification and switching in industrial control systems requiring stable gain and high voltage tolerance.
  • Signal amplification circuits in communication equipment operating in extreme temperature conditions.
  • Military and aerospace electronic devices where ruggedness and reliability are mandatory.
  • General-purpose transistor use in power regulation and interface circuits within automated industrial machinery.

JANTXV2N5682-Transistor Brand Info

The JANTXV2N5682 transistor is a military-grade semiconductor component known for its exceptional durability and precision. Manufactured under strict quality control, this transistor is designed to meet the rigorous demands of defense and industrial markets. Its brand reputation reflects a commitment to reliability and performance, making it a preferred choice for engineers seeking a trusted transistor solution for high-reliability applications.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating for this transistor is 1 ampere. This allows it to handle moderate current loads in switching and amplification circuits without compromising device integrity.

Can this transistor operate in high-temperature environments?

Yes, it is designed to function reliably in temperatures ranging from -55??C up to +200??C, making it suitable for applications exposed to harsh thermal conditions.

What is the significance of the DC current gain (hFE) range for this transistor?

The DC current gain range between 40 and 320 ensures consistent amplification performance across different operating points, providing flexibility for varying circuit requirements.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

With a transition frequency of 100 MHz, this transistor can be effectively used in moderate high-frequency applications such as RF amplifiers and signal processing circuits.

How does the junction isolation feature benefit industrial applications?

Robust junction isolation reduces leakage currents and enhances device stability, which is critical for industrial applications that demand long-term reliability and resistance to environmental stress.

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