JANKCAL2N3637-Transistor-Die by JANKCAL – High-Performance Switching Transistor Die

  • This transistor die controls electrical current flow, enabling efficient signal amplification in circuits.
  • Its breakdown voltage rating ensures stable operation under high voltage conditions, protecting connected components.
  • The compact die size supports minimal board space usage, facilitating integration into dense electronic assemblies.
  • Ideal for use in power management modules where precise current regulation enhances overall device performance.
  • Manufactured with strict quality controls to maintain consistent electrical characteristics and long-term reliability.
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产品上方询盘

JANKCAL2N3637-Transistor-Die Overview

The JANKCAL2N3637-Transistor-Die is a precision semiconductor component designed for high-performance switching and amplification applications. Engineered for integration within complex electronic assemblies, this transistor die offers robust electrical characteristics including a balanced trade-off between current handling and voltage tolerance. Its compact die format enables efficient thermal management and facilitates customization in hybrid circuits. Ideal for engineers and sourcing specialists seeking reliable, high-quality transistor dies, this product is available through IC Manufacturer, ensuring consistent manufacturing standards and traceability.

JANKCAL2N3637-Transistor-Die Key Features

  • High Current Handling Capability: Supports collector currents up to specified limits, enabling operation in power amplification stages with efficiency.
  • Optimized Voltage Rating: Offers a collector-emitter voltage rating suitable for medium power switching, ensuring device reliability under varying load conditions.
  • Compact Die Size: Facilitates integration into hybrid modules and custom semiconductor packages, reducing overall system footprint.
  • Thermal Performance: Designed to maintain stable operation under elevated junction temperatures, improving device longevity and reliability in industrial environments.

JANKCAL2N3637-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)80V
Collector Current (IC)5A
Power Dissipation (PD)30W
Gain Bandwidth Product (fT)50MHz
Junction Temperature (TJ)150??C
Base-Emitter Voltage (VBE)1.2V
Package TypeDie?C
MaterialSilicon?C

JANKCAL2N3637-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides a superior balance of current capacity and voltage tolerance compared to typical alternatives, ensuring reliable performance in demanding circuits. Its compact die format enhances design flexibility, while its thermal stability supports extended operational life. These characteristics make it an effective choice for engineers needing a dependable transistor solution with robust electrical and thermal properties.

Typical Applications

  • Power Amplification Circuits: Suitable for use in audio and RF amplification modules where precise current control and voltage handling are critical.
  • Switching Regulators: Enables efficient switching in power management and DC-DC converter designs.
  • Industrial Control Systems: Supports robust operation in control electronics requiring stable transistor performance under varying environmental conditions.
  • Hybrid and Custom Semiconductor Modules: Ideal for integration in multi-chip modules and custom assemblies demanding reliable transistor dies.

JANKCAL2N3637-Transistor-Die Brand Info

The JANKCAL2N3637-Transistor-Die is manufactured by a reputable semiconductor foundry specializing in discrete transistor dies for industrial and electronic applications. This product exemplifies the brand??s commitment to quality, precision manufacturing, and consistent performance. Each die undergoes rigorous testing to meet stringent electrical and thermal specifications, supporting engineers and sourcing specialists in delivering reliable end-products.

FAQ

What is the maximum collector current for this transistor die?

The maximum collector current rating is 5 amps, allowing it to handle moderate power levels effectively in amplification and switching applications without compromising reliability.

Can this transistor die operate at high temperatures?

Yes, the device is rated for a junction temperature up to 150??C, allowing it to maintain stable performance in industrial environments with elevated thermal conditions.

Is this transistor die suitable for high-frequency applications?

With a gain bandwidth product of 50 MHz, this transistor die is appropriate for medium-frequency applications such as audio and RF amplification, but may not be optimal for very high-frequency designs.

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产品中间询盘

What package type is the JANKCAL2N3637 offered in?

This product is supplied as a bare silicon die, intended for integration into custom packages or hybrid modules rather than standard packaged transistors.

How does the die format benefit electronic design?

The compact die size enables designers to integrate the transistor directly into multi-chip modules, reducing space and improving thermal management compared to discrete packaged components.

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