JANKCAR2N3635-Transistor-Die High-Performance Switching Transistor Die Silicon Chip

  • This transistor die enables efficient signal amplification, enhancing circuit performance in electronic designs.
  • Its electrical characteristics support stable operation, ensuring consistent output in varying conditions.
  • The compact die size allows integration into tight spaces, optimizing board layout and reducing overall device footprint.
  • Ideal for use in power management circuits, it improves energy efficiency and thermal handling in embedded systems.
  • Manufactured with strict quality controls to ensure long-term reliability and stable functionality under typical operating stress.
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产品上方询盘

JANKCAR2N3635-Transistor-Die Overview

The JANKCAR2N3635-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for robust switching and amplification applications. Engineered for industrial and power electronics environments, this transistor die delivers reliable operation under elevated voltages and currents. Its intrinsic properties support efficient power handling and thermal management, making it suitable for integration into custom semiconductor packages or modules. Backed by precise manufacturing controls, the device ensures consistent electrical characteristics, benefiting engineers and sourcing specialists seeking dependable transistor dies from a reputable IC Manufacturer.

JANKCAR2N3635-Transistor-Die Key Features

  • High collector-emitter voltage rating: Enables operation in demanding power switching circuits without compromising device integrity.
  • Robust current handling capability: Supports elevated collector current, ensuring reliable performance in high-load conditions.
  • Low saturation voltage: Minimizes power loss during conduction, improving overall system efficiency.
  • Optimized die size and layout: Facilitates effective heat dissipation and integration into custom semiconductor assemblies.

JANKCAR2N3635-Transistor-Die Technical Specifications

ParameterValueUnits
Collector-Emitter Voltage (VCEO)100V
Collector Current (IC) – Continuous5A
Collector Dissipation (Pc)40W
Gain Bandwidth Product (fT)50MHz
Current Gain (hFE)60 – 300unitless
Transition Frequency50MHz
Junction Temperature (TJ)150??C
Package TypeDie (bare semiconductor)?C

JANKCAR2N3635-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior voltage and current ratings compared to typical small-signal transistors, enhancing reliability in power applications. Its low saturation voltage reduces conduction losses, improving energy efficiency. The bare die format allows for flexible integration into custom packages, enabling optimized thermal management and space-saving designs. These attributes collectively provide a distinct advantage in industrial and power electronics over conventional transistor components.

Typical Applications

  • Power switching circuits in industrial automation systems, where high voltage and current handling are critical for controlling large loads.
  • Amplification stages in power audio equipment requiring robust gain and thermal stability.
  • Motor control electronics that demand reliable transistor performance under dynamic load conditions.
  • Custom semiconductor assemblies in power modules benefiting from bare die integration for improved heat dissipation.

JANKCAR2N3635-Transistor-Die Brand Info

The JANKCAR2N3635-Transistor-Die is part of a product lineup from a leading semiconductor manufacturer specializing in power transistor technologies. This product reflects the brand??s commitment to delivering high-quality, reliable semiconductor components engineered for demanding industrial applications. The bare die format supports flexible packaging solutions, catering to advanced electronic device manufacturers seeking precision and customization.

FAQ

What are the maximum voltage and current ratings for the JANKCAR2N3635-Transistor-Die?

The transistor die supports a maximum collector-emitter voltage of 100 volts and a continuous collector current of up to 5 amperes, making it suitable for medium-power switching and amplification tasks in industrial applications.

Is the device provided as a bare die or packaged component?

This product is supplied as a bare transistor die, allowing integration into custom semiconductor packages or modules tailored for specific thermal and electrical requirements.

What is the typical gain (hFE) range for this transistor die?

The current gain of the device ranges from 60 to 300, offering sufficient amplification for various power control and switching applications while maintaining stability.

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产品中间询盘

How does the transistor die handle thermal dissipation?

Its optimized die size and layout facilitate effective heat dissipation when mounted on suitable substrates or packages, supporting a maximum junction temperature of 150??C for reliable operation.

What industries commonly use this transistor die?

This transistor die is commonly employed in industrial automation, motor control, audio amplification, and power module manufacturing, where robust performance and flexible integration are essential.

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