JANKCAR2N3637-Transistor-Die Overview
The JANKCAR2N3637-Transistor-Die is a high-performance semiconductor component designed for robust switching and amplification applications. Featuring a durable silicon die structure, it ensures reliable operation under varying electrical conditions. With a focus on efficiency and thermal stability, this transistor die supports medium power handling and is optimized for integration into discrete or hybrid circuit assemblies. Engineers and sourcing specialists can leverage its precise electrical characteristics and consistent manufacturing quality for demanding industrial and automotive electronics. For detailed technical insight and sourcing options, visit IC Manufacturer.
JANKCAR2N3637-Transistor-Die Key Features
- High voltage capability: Supports collector-emitter voltages up to 100 V, enabling reliable operation in power switching circuits.
- Robust collector current rating: Handles continuous currents up to 30 A, suitable for medium-power applications requiring stable current flow.
- Low saturation voltage: Minimizes power loss and heat generation, enhancing overall circuit efficiency and thermal management.
- Optimized die construction: Ensures high gain and fast switching response, critical for performance-sensitive electronic designs.
JANKCAR2N3637-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector Current (IC) | 30 | A |
| Power Dissipation (Ptot) | 115 | W |
| Gain Bandwidth Product (fT) | 8 | MHz |
| Transition Frequency | 8 | MHz |
| DC Current Gain (hFE) | 20?C70 | ?? |
| Collector-Base Voltage (VCBO) | 120 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Junction Temperature (Tj) | 150 | ??C |
JANKCAR2N3637-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior power handling and voltage tolerance compared to typical alternatives, delivering enhanced reliability in demanding environments. Its low saturation voltage reduces energy losses and thermal stress, improving system efficiency. The optimized gain and switching speed enable precise control, making it a preferred choice for industrial and automotive power electronics over conventional transistor dies.
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Typical Applications
- Power switching circuits in industrial control systems, where reliable high current and voltage handling are critical for operational stability.
- Motor control drivers requiring robust transistor dies capable of sustaining frequent switching cycles without degradation.
- Voltage regulation modules in automotive electronics, benefiting from the device’s thermal stability and gain characteristics.
- Amplification stages in audio and signal processing equipment, leveraging the transistor’s consistent current gain and frequency response.
JANKCAR2N3637-Transistor-Die Brand Info
The JANKCAR2N3637-Transistor-Die is a premium semiconductor component manufactured by IC Manufacturer, known for delivering high-quality discrete devices that meet rigorous industrial standards. This transistor die represents the brand??s commitment to precision engineering and reliability, ensuring dependable performance in power electronics applications. The product is backed by thorough quality control and extensive testing protocols, aligning with IC Manufacturer??s reputation for durable, high-efficiency semiconductor solutions.
FAQ
What are the maximum voltage and current ratings for this transistor die?
The device supports a maximum collector-emitter voltage of 100 volts and can handle continuous collector currents up to 30 amperes. These ratings make it suitable for medium-power applications requiring robust electrical performance.
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How does the low saturation voltage benefit my circuit design?
A low saturation voltage reduces power dissipation in the transistor during conduction, which minimizes heat generation and improves overall efficiency. This helps maintain thermal stability and can extend component lifespan in high-current switching applications.
Can this transistor die be used in high-frequency applications?
With a gain bandwidth product around 8 MHz, this transistor die is suitable for moderate frequency applications but may not be optimal for very high-frequency RF circuits. It is well-suited for typical industrial switching and amplification tasks.
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What thermal limits should be considered when integrating this transistor die?
The maximum junction temperature is rated at 150??C, which means adequate heat dissipation and thermal management strategies are necessary during implementation to ensure reliable operation and prevent thermal runaway.
Is the transistor die compatible with standard packaging and assembly processes?
Yes, the die is designed for integration into discrete or hybrid assemblies and is compatible with typical semiconductor packaging and mounting techniques used in industrial electronics manufacturing.
