JANTX2N5679-Transistor by JANTX | High-Power Switching Transistor | TO-3 Package

  • This transistor amplifies electrical signals, enabling precise control in various electronic circuits.
  • It features a robust voltage rating, ensuring stable performance under demanding electrical conditions.
  • The compact package design allows for efficient use of board space in densely packed assemblies.
  • Ideal for switching applications, it enhances circuit responsiveness and reduces power loss.
  • Manufactured to meet industry standards, it offers consistent reliability over extended operation periods.
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JANTX2N5679-Transistor Overview

The JANTX2N5679 is a high-performance silicon NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality and reliability standards. Built to exceed MIL-STD specifications, this transistor offers robust current gain and voltage handling capabilities, making it suitable for power amplification and switching in demanding environments. Its rugged construction ensures longevity and stable operation under thermal stress, delivering consistent performance in critical industrial and defense systems. For precise electronic design and sourcing, the JANTX2N5679 provides a reliable solution backed by rigorous testing and quality assurance from IC Manufacturer.

JANTX2N5679-Transistor Key Features

  • High Voltage Handling: Capable of withstanding up to 200 V collector-emitter voltage, ensuring reliable operation in high-voltage circuits.
  • Robust Current Gain: Provides a typical DC gain (hFE) range of 40 to 160, optimizing signal amplification and switching efficiency.
  • Military-Grade Reliability: Qualified to meet MIL-STD-883 standards, guaranteeing superior performance under extreme temperature and mechanical stress.
  • Wide Operating Temperature Range: Functional from -65??C to +200??C, suitable for harsh environmental conditions.

JANTX2N5679-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 200 V
Collector-Base Voltage (VCBO) 200 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
DC Current Gain (hFE) 40 to 160 Unitless
Transition Frequency (fT) 3 MHz
Power Dissipation (PD) 30 W
Operating Temperature Range -65 to +200 ??C

JANTX2N5679-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to typical commercial-grade devices, making it ideal for high-reliability military and aerospace applications. Its extended temperature tolerance and MIL-STD certification enhance operational stability and durability under harsh conditions. The broad current gain range supports versatile circuit designs, while its robust power dissipation rating allows efficient thermal management, outperforming many standard transistors in both sensitivity and reliability.

Typical Applications

  • Power amplification stages in aerospace communication systems where high voltage and current handling are critical for signal integrity and reliability over extended missions.
  • Switching components in military-grade radar and control circuits requiring rugged and stable transistor performance in extreme environments.
  • Industrial automation systems exposed to wide temperature variations, needing dependable transistor switch and amplification solutions.
  • High-reliability instrumentation and test equipment operating in harsh conditions, benefiting from the transistor??s robust specifications and certified quality.

JANTX2N5679-Transistor Brand Info

The JANTX2N5679 is a recognized transistor model within the military-standard semiconductor category, produced under rigorous quality control protocols to meet stringent defense and aerospace industry requirements. This product line is synonymous with durability, precision, and performance, backed by comprehensive testing and documentation from established manufacturers. It reflects a commitment to delivering components that sustain mission-critical electronic systems, ensuring longevity and reliability in demanding applications.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 10 amperes, allowing it to manage substantial current loads in power amplification and switching applications without compromising performance.

Can this transistor operate in extreme temperature environments?

Yes, it is designed to function reliably over a wide temperature range from -65??C to +200??C, making it suitable for harsh industrial and military environments.

How does the DC current gain (hFE) affect circuit design?

The DC current gain of 40 to 160 allows engineers to select this transistor for applications requiring varying amplification levels, providing flexibility in designing signal processing or switching circuits.

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What standards does this transistor comply with?

This device complies with MIL-STD-883, ensuring it meets strict military specifications for quality, reliability, and environmental resistance, which is critical for defense and aerospace use.

Is this transistor suitable for high-frequency applications?

With a transition frequency of approximately 3 MHz, this transistor can handle moderate frequency applications, suitable for many power amplification tasks but not optimized for very high-frequency RF circuits.

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