JANTXV2N2605-Transistor Overview
The JANTXV2N2605 is a high-performance silicon NPN bipolar junction transistor designed for reliable switching and amplification in industrial and military-grade electronic circuits. Featuring a robust construction and compliance with JANTXV military specifications, this transistor ensures consistent operation under demanding environmental conditions. Its optimized gain and voltage ratings make it suitable for various high-frequency and power applications, providing engineers with a dependable semiconductor device that meets stringent quality standards. For sourcing and detailed technical data, visit IC Manufacturer.
JANTXV2N2605-Transistor Key Features
- High Voltage Handling: Supports collector-emitter voltages up to 100V, enabling use in high-voltage switching circuits.
- Reliable Gain Characteristics: Maintains stable current gain (hFE) between 40 and 320, ensuring predictable amplification.
- Military-Grade Quality: Manufactured to JANTXV standards, offering enhanced ruggedness and reliability for harsh environments.
- Temperature Range: Operates effectively from -55??C to +125??C, suitable for extreme temperature applications.
JANTXV2N2605-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 120 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A (max) |
| Power Dissipation (Ptot) | 800 mW |
| Current Gain (hFE) | 40 to 320 |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Temperature Range (Tj) | -55??C to +125??C |
| Package Type | TO-18 Metal Can |
JANTXV2N2605-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling combined with military-grade reliability, distinguishing it from standard commercial alternatives. Its broad operating temperature range and consistent gain characteristics provide enhanced stability and performance in challenging industrial and defense applications, making it a preferred choice for engineers seeking durability and precision in their semiconductor components.
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Typical Applications
- High-frequency amplification in communication equipment, benefiting from its transition frequency and gain stability for clear signal processing.
- Switching circuits in industrial control systems requiring robust voltage and current ratings for reliable operation.
- Military and aerospace electronic systems where compliance with JANTXV specifications ensures dependable performance under extreme conditions.
- General-purpose amplification and switching in precision instrumentation, leveraging its low noise and consistent gain features.
JANTXV2N2605-Transistor Brand Info
The JANTXV2N2605 transistor is manufactured and branded under the JANTXV series, known for meeting rigorous military standards (JANTXV) in semiconductor quality and performance. This product line emphasizes ruggedness and reliability, catering to defense, aerospace, and industrial sectors where component dependability is critical. The JANTXV2N2605, packaged in a robust TO-18 metal can, reflects the brand??s commitment to delivering high-quality, long-lasting transistors engineered to operate reliably in harsh environments and demanding applications.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current (IC) rating for this transistor is 1 ampere, enabling it to handle moderate power loads suitable for switching and amplification tasks within its specified voltage limits.
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Can this transistor operate in extreme temperature environments?
Yes, it is qualified to operate within a junction temperature range of -55??C to +125??C, making it suitable for use in both cold and hot environments commonly encountered in military and industrial applications.
What package type does this transistor come in?
This device is supplied in a TO-18 metal can package, providing excellent thermal conductivity and mechanical protection, which is advantageous in rugged and high-reliability electronic systems.
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How does the transistor gain vary across its operating range?
The current gain (hFE) of this transistor ranges from 40 to 320, ensuring that it maintains effective amplification performance across various operating conditions and frequencies up to 100 MHz.
Is this transistor suitable for high-frequency applications?
Yes, with a typical transition frequency (fT) of approximately 100 MHz, it supports high-frequency amplification and switching functions, making it ideal for communication and signal processing circuits requiring fast response times.
