JANKCA2N2369A-Transistor-Die Overview
The JANKCA2N2369A-Transistor-Die is a high-performance NPN small-signal transistor die designed for precision amplification and switching applications. Engineered with robust electrical characteristics, it offers reliable gain and fast switching speeds that suit demanding industrial electronics. This transistor die ensures low noise operation and stable performance across varying conditions, making it ideal for integration into custom semiconductor modules. Sourced and manufactured under stringent quality controls, it supports efficient circuit design and long-term operational stability. For engineers seeking a dependable transistor die, IC Manufacturer provides this die as a versatile component for advanced electronic solutions.
JANKCA2N2369A-Transistor-Die Key Features
- High current gain (hFE): Enables efficient signal amplification with minimal distortion, supporting precise analog circuit performance.
- Fast switching capability: Allows rapid on/off transitions, critical for high-frequency switching applications and digital circuit responsiveness.
- Low noise operation: Reduces signal interference in sensitive analog and RF circuits, enhancing overall signal integrity.
- Compact die form factor: Facilitates seamless integration into multi-chip modules or custom semiconductor assemblies, optimizing space and thermal management.
JANKCA2N2369A-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | NPN Bipolar Junction Transistor | – |
| Collector-Emitter Voltage (Vceo) | 30 | V |
| Collector Current (Ic) | 0.5 | A |
| Power Dissipation (Pd) | 0.8 | W |
| DC Current Gain (hFE) | 100 to 300 | – |
| Transition Frequency (ft) | 100 | MHz |
| Base-Emitter Voltage (Vbe) | 0.7 | V |
| Package Type | Die | – |
| Operating Temperature Range | -55 to +150 | ??C |
JANKCA2N2369A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior gain and switching speed compared to many standard small-signal transistors, making it highly suitable for precision amplification and fast-switching circuits. Its low noise operation enhances signal clarity, while the bare die format allows flexible integration into custom semiconductor packages, which typical packaged transistors cannot easily provide. These advantages contribute to improved circuit efficiency, reliability, and design adaptability in demanding industrial applications.
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Typical Applications
- Low-noise amplifier stages in analog signal processing, where high gain and minimal distortion are critical for accurate signal reproduction.
- High-frequency switching in telecommunications equipment, enabling rapid data transmission with minimal signal loss.
- Custom semiconductor module assembly, allowing system designers to integrate the transistor directly onto substrates for optimized space and thermal performance.
- General purpose switching in industrial control circuits, providing reliable performance under varying environmental conditions.
JANKCA2N2369A-Transistor-Die Brand Info
The JANKCA2N2369A transistor die is produced by a leading manufacturer specializing in discrete semiconductor components for industrial and commercial electronics. This product embodies the company??s commitment to delivering high-quality, reliable transistor dies that meet rigorous performance standards. The brand is recognized for its focus on precision engineering and strict process control, ensuring consistent device characteristics and long-term durability in demanding electronic applications.
FAQ
What is the maximum collector current of this transistor die?
The maximum collector current for this transistor die is 0.5 amperes, which defines the upper limit of continuous current the device can safely handle without damage, suitable for small-signal amplification and switching tasks.
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Can this transistor die operate at high frequencies?
Yes, the transistor die has a transition frequency (ft) of approximately 100 MHz, making it capable of handling high-frequency signals typically found in RF and fast-switching digital circuits.
What are the thermal operating limits of this transistor die?
The device is specified to operate reliably within a temperature range from -55??C up to +150??C, allowing it to function in harsh industrial environments and maintain stable electrical performance.
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Is the device suitable for integration into multi-chip modules?
Absolutely. Being supplied as a bare die, this transistor is designed for direct integration into multi-chip modules or custom semiconductor packages, offering flexibility for advanced electronic assembly and improved thermal management.
What is the significance of the low noise characteristic of this transistor die?
The low noise operation is crucial for applications requiring signal fidelity, such as sensitive analog amplifiers and RF circuits, as it minimizes interference and distortion, thereby improving overall signal quality.
