JANTXV2N5238S-Transistor by JANTX | High-Voltage Transistor | TO-3 Package

JANTXV2N5238S-Transistor Overview

The JANTXV2N5238S is a high-reliability NPN bipolar junction transistor designed for use in demanding military and aerospace applications. Built to meet JAN (Joint Army-Navy) and JANTXV specifications, it guarantees robust performance under extreme environmental conditions including temperature and mechanical stress. This transistor features a silicon planar epitaxial structure, ensuring stable operation with low noise and high gain. With its TO-18 metal can package and stringent quality controls, the device is ideal for precision amplification and switching tasks where reliability and endurance are critical. Engineers and sourcing specialists will appreciate its compliance with aerospace standards and consistent electrical characteristics. For more details, visit IC Manufacturer.

JANTXV2N5238S-Transistor Key Features

• High current gain (hFE): Enables efficient signal amplification with consistent performance across temperature ranges.
• Low noise figure: Ensures minimal signal distortion, critical for sensitive analog circuits and communication systems.
• Wide operating temperature range: Supports operation from -55??C to +125??C, ideal for harsh environments.
• TO-18 hermetic metal can package: Provides excellent thermal dissipation and mechanical protection, enhancing device longevity.
• JAN/JANTXV military qualification: Guarantees stringent quality and reliability standards for mission-critical applications.
• High collector-emitter voltage (Vceo): Permits use in circuits with elevated voltage demands without breakdown risk.
• Stable frequency response: Suitable for RF and intermediate frequency amplification in communication equipment.

JANTXV2N5238S-Transistor Technical Specifications

JANTXV2N5238S-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and performance under extreme environmental conditions compared to standard commercial devices. Its military-grade JAN/JANTXV qualification ensures rigorous testing for mechanical shock, temperature cycling, and high voltage tolerance. The low noise operation and stable gain provide enhanced sensitivity and accuracy in signal amplification. Compared to typical transistors, it integrates seamlessly in critical aerospace and defense systems requiring long-term dependability and consistent electrical characteristics.

Typical Applications

• High-frequency amplification in military communication equipment, where stability and low noise are essential for clear signal transmission under harsh conditions.
• Switching elements in aerospace electronic control systems, benefiting from the device??s robustness and temperature resilience.
• Precision analog signal processing circuits requiring stable gain and low distortion over wide temperature ranges.
• Test and measurement instrumentation designed for rugged environments, leveraging the transistor??s hermetic packaging and reliability.

JANTXV2N5238S-Transistor Brand Info

The JANTXV2N5238S transistor is a specialized semiconductor product manufactured under strict military standards by a reputable supplier known for high-quality aerospace components. The brand emphasizes reliability, traceability, and adherence to JAN/JANTXV certifications, ensuring each unit meets exacting requirements for defense and aerospace markets. This product line is recognized for its rigorous screening process, including burn-in and environmental stress testing, which guarantees operational integrity in mission-critical applications. The brand??s commitment to quality supports engineers and procurement teams in sourcing dependable devices for high-reliability systems.

FAQ

What makes the JANTXV2N5238S suitable for military and aerospace applications?

This transistor is qualified to JAN/JANTXV military standards, which include stringent tests for temperature extremes, mechanical shock, and electrical stress. Its hermetic TO-18 metal can package and silicon planar epitaxial design ensure reliable operation in harsh environments typical of aerospace and defense systems.

What is the typical current gain range for this transistor?

The device offers a current gain (hFE) typically between 40 and 110. This range supports a variety of amplification needs, providing stable gain performance across its specified temperature range.

Can this transistor operate at high frequencies?

Yes, the transition frequency (fT) of this transistor is approximately 100 MHz, making it suitable for RF and intermediate frequency amplification applications common in communication and signal processing equipment.

What are the key electrical limits to consider when using this transistor?

The maximum collector-emitter voltage is 40 V, collector-base voltage is 60 V, and emitter-base voltage is limited to 5 V. The maximum collector current is 0.5 A, with a total power dissipation of 0.8 W, parameters critical for ensuring safe and reliable operation within system designs.

How does the package type benefit the transistor??s performance?

The TO-18 hermetic metal can package offers excellent thermal conductivity and mechanical protection, reducing the risk of environmental damage. This packaging supports device longevity and stable electrical characteristics, especially in temperature-sensitive and rugged applications.