JANTXV2N5153P-Transistor-PIND Overview
The JANTXV2N5153P-Transistor-PIND is a high-performance transistor designed for precision switching and amplification in industrial and military-grade electronic circuits. Engineered to meet stringent reliability and durability standards, this device delivers stable operation under varying temperature and electrical conditions. Its robust construction ensures long-term functionality in demanding environments, making it ideal for rugged applications. Sourcing specialists and engineers benefit from its consistent electrical characteristics and compatibility with standard transistor circuit designs. This product is available through IC Manufacturer, offering dependable quality and traceability.
JANTXV2N5153P-Transistor-PIND Key Features
- High gain capability: Provides efficient signal amplification, improving circuit sensitivity and performance.
- Enhanced thermal stability: Maintains consistent operation across a wide temperature range, crucial for industrial environments.
- Military-grade reliability: Designed to comply with strict military specifications, ensuring long-term durability and robustness.
- Hermetically sealed PIND package: Protects internal components from moisture and contaminants, extending device lifespan.
JANTXV2N5153P-Transistor-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (V_CEO) | 80 V |
| Collector Current (I_C) | 150 mA (max) |
| Gain Bandwidth Product (f_T) | Up to 100 MHz |
| Power Dissipation (P_D) | 625 mW |
| Operating Temperature Range | -55??C to +125??C |
| Package Type | Hermetically sealed PIND (Plastic Inertial Non-Destructive) package |
| DC Current Gain (h_FE) | 40 – 200 (typical) |
JANTXV2N5153P-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers superior reliability and thermal endurance compared to standard commercial transistors. Its hermetically sealed PIND package enhances protection against environmental contaminants, increasing operational lifespan. The device??s stable gain and voltage ratings support precise signal control, making it advantageous for applications requiring consistent performance under stress. These factors contribute to reduced maintenance and improved system uptime in industrial and military uses.
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Typical Applications
- Precision amplification and switching in ruggedized military and aerospace communication systems, where reliable signal integrity is critical under harsh environmental conditions.
- Industrial control systems requiring stable transistor operation across wide temperature ranges for process automation.
- High-reliability instrumentation circuits that demand consistent electrical characteristics and long-term durability.
- Power regulation modules in embedded electronics where efficient current handling and thermal management are essential.
JANTXV2N5153P-Transistor-PIND Brand Info
The JANTXV2N5153P-Transistor-PIND is part of a trusted series known for combining military-grade quality with industrial application versatility. Manufactured under stringent quality controls, this transistor meets rigorous standards for performance and reliability. Its brand reputation is built on delivering components that withstand extreme conditions while maintaining electrical precision. This product line is widely used by engineers and sourcing specialists who prioritize dependable semiconductor solutions for critical systems.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this device is 150 milliamps. This rating ensures it can handle moderate current loads common in signal amplification and switching applications without degradation.
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What temperature range is suitable for operating this transistor?
This transistor is rated for operation between -55??C and +125??C, making it suitable for use in harsh environments including industrial and military applications where temperature extremes are expected.
How does the PIND package benefit the transistor??s performance?
The hermetically sealed PIND package protects the transistor??s internal elements from moisture, dust, and other contaminants. This sealing enhances reliability and extends the device??s lifespan, especially in demanding or corrosive environments.
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Is this transistor compatible with standard NPN transistor circuit designs?
Yes, the device is an NPN bipolar junction transistor with typical electrical characteristics that allow it to be integrated into standard NPN transistor circuits without requiring special design modifications.
What applications are best suited for this transistor??s features?
This transistor is ideal for precision amplification, switching, and control in military, aerospace, and industrial systems. Its robust design supports usage in communication equipment, instrumentation, and power regulation modules requiring consistent performance under stress.
