JAN2N3810L-Dual-Transistor by JAN – High-Speed Switching, TO-39 Package

  • This dual-transistor configuration enables efficient signal amplification and switching for various electronic circuits.
  • Designed with a moderate voltage rating, it supports stable operation under typical power supply conditions.
  • The compact package ensures reduced board space, facilitating denser circuit layouts and easier integration.
  • Ideal for audio amplification and driver stages, it improves performance in consumer and industrial devices.
  • Manufactured to meet standard quality controls, ensuring consistent reliability and long-term circuit stability.
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产品上方询盘

JAN2N3810L-Dual-Transistor Overview

The JAN2N3810L is a dual NPN transistor designed for reliable switching and amplification tasks in industrial and military-grade electronic circuits. This device provides two complementary transistors packaged together, enabling compact, efficient circuit designs with enhanced performance stability. Engineered to meet stringent JEDEC and MIL-STD standards, it offers robust thermal and electrical characteristics suitable for demanding environments. Its low noise and high gain make it ideal for signal processing and interface applications. Sourcing this device ensures consistent quality and longevity from a trusted IC Manufacturer known for precision semiconductor components.

JAN2N3810L-Dual-Transistor Key Features

  • Dual transistor configuration: Integrates two NPN transistors in a single package, saving board space and simplifying circuit layout.
  • High current gain (hFE): Ensures efficient amplification, improving signal integrity and reducing power consumption in switching applications.
  • Wide voltage ratings: Supports collector-emitter voltages up to 100V, allowing use in diverse industrial power and control circuits.
  • Military-grade reliability: Meets JAN (Joint Army-Navy) specifications, guaranteeing performance under harsh environmental conditions and extended operational life.

JAN2N3810L-Dual-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Dual ?C
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
Power Dissipation (PC) 1.0 W
DC Current Gain (hFE) 40 to 320 ?C
Transition Frequency (fT) 100 MHz
Operating Temperature Range -55 to +200 ??C

JAN2N3810L-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers enhanced integration by combining two NPN transistors into one unit, reducing board footprint and simplifying assembly. Compared to typical single-transistor components, it delivers higher reliability under extreme temperatures and voltage stresses. Its broad gain range and high transition frequency support precise amplification and fast switching, making it preferable for advanced control and signal processing applications. The military-grade qualification ensures compliance with rigorous quality standards, surpassing many commercial alternatives.

Typical Applications

  • Signal amplification in industrial control systems requiring stable gain and low noise across temperature extremes.
  • Switching elements in power management circuits for high-voltage and high-current loads.
  • Interface drivers within communication equipment demanding reliable transistor pairs.
  • Military and aerospace electronics where component durability and consistent performance are critical.

JAN2N3810L-Dual-Transistor Brand Info

The JAN2N3810L dual transistor is a specialized semiconductor device produced under stringent military standards, ensuring exceptional durability and performance. The JAN prefix signifies compliance with Joint Army-Navy specifications, highlighting the device??s suitability for demanding industrial and defense applications. This product is backed by extensive quality control and rigorous testing protocols to meet high-reliability requirements. It is part of a portfolio from a recognized supplier focused on delivering robust, precision-engineered transistors for critical electronic systems.

FAQ

What is the maximum collector current rating for the JAN2N3810L dual transistor?

The maximum collector current for each transistor within the dual device is rated at 0.8 amperes. This rating ensures reliable operation in moderate power switching and amplification applications without risk of thermal overload under specified conditions.

Can the JAN2N3810L be used in high-frequency circuits?

Yes, the transistor has a transition frequency (fT) of approximately 100 MHz, allowing it to handle high-frequency signal amplification and switching tasks effectively in various industrial and communication electronics.

What temperature range does the JAN2N3810L support?

This dual transistor is designed for operation in a wide temperature range from -55??C up to +200??C, making it suitable for harsh environments and military applications where thermal stability is critical.

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产品中间询盘

How does the dual transistor packaging benefit circuit design?

Integrating two matched NPN transistors in a single package reduces circuit board space and component count. This simplifies layout, improves thermal management, and enhances signal matching for amplifier or switching stages.

Is the JAN2N3810L compliant with military standards?

Yes, the JAN prefix indicates that this device meets the Joint Army-Navy military standards, ensuring high reliability, durability, and consistent performance in mission-critical applications.

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