2N3868-Transistor by ON Semiconductor | NPN Amplifier Transistor | TO-18 Package

2N3868-Transistor Overview

The 2N3868 is a high-performance NPN bipolar junction transistor designed primarily for medium power amplification and switching applications. It offers a balance of gain and power handling capabilities with a transition frequency suitable for RF and audio frequency circuits. With a collector current rating of up to 0.5 A and collector-base voltage tolerance of 30 V, this transistor is ideal for use in amplifiers, oscillators, and driver stages. Its TO-18 metal can package ensures robust thermal management and mechanical reliability, making it a preferred choice for engineers seeking a dependable transistor component. For sourcing and detailed specifications, visit IC Manufacturer.

2N3868-Transistor Key Features

• High Transition Frequency: With a typical transition frequency (fT) of 100 MHz, it supports efficient amplification in RF and high-frequency audio circuits.
• Moderate Power Handling: Capable of sustaining collector currents up to 0.5 A, enabling reliable operation in medium power amplifier stages.
• Robust Voltage Ratings: Collector-base voltage of 30 V ensures stable performance in circuits with moderate voltage requirements.
• Thermally Stable TO-18 Package: The metal can package provides excellent heat dissipation, enhancing device reliability under continuous operation.

2N3868-Transistor Technical Specifications

2N3868-Transistor Advantages vs Typical Alternatives

This transistor stands out from typical alternatives by combining a high transition frequency with robust power handling and voltage ratings, enabling superior performance in RF and medium power amplification. Its metal can package enhances thermal stability and reliability compared to plastic-encapsulated alternatives. The wide hFE gain range offers flexibility for precision circuit design, making it a reliable choice for engineers requiring consistent performance under varying operating conditions.

Typical Applications

• RF Amplifiers: Utilized in radio frequency amplifier stages due to its high transition frequency and moderate power handling capability, enabling clear signal amplification in communication equipment.
• Audio Frequency Amplifiers: Suitable for audio preamplifiers and driver circuits, delivering low distortion and stable gain performance.
• Oscillator Circuits: Employed in oscillator designs where stable high-frequency operation is essential for signal generation and timing.
• Switching Circuits: Used in medium power switching applications within industrial and consumer electronics where fast switching and durability are required.

2N3868-Transistor Brand Info

The 2N3868 transistor is a widely recognized component in the semiconductor industry, produced by reputable manufacturers adhering to stringent quality standards. This device is known for its consistent electrical characteristics and durability, making it a staple for applications ranging from RF amplification to general-purpose medium power switching. Its availability from trusted suppliers ensures engineers and sourcing specialists can integrate it confidently into industrial and commercial designs.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 0.5 A, which allows it to handle moderate power levels suitable for amplification and switching circuits without risk of damage under normal operating conditions.

What package type does the transistor use and why is it important?

This transistor is housed in a TO-18 metal can package, which provides superior thermal dissipation compared to plastic packages. This improves reliability and extends device lifetime in continuous or high-power applications.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency typically around 100 MHz, it is well-suited for RF and audio frequency amplifier circuits where high-speed response and gain are necessary.

What are the voltage limits for safe operation?

The device supports collector-emitter and collector-base voltages up to 30 V, making it suitable for circuits operating within these voltage ranges without risk of breakdown.

Is this transistor suitable for switching applications?

Indeed, it can be used in medium power switching applications, benefiting from its fast switching capabilities and robust construction, which ensure reliable performance in various electronic systems.