2N3765-Transistor by ON Semiconductor – High-Power NPN Transistor, TO-66 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent performance.
  • The compact package design allows for easy integration, saving valuable board space in tight layouts.
  • Ideal for use in audio amplifiers where signal fidelity and reliable switching are crucial for sound quality.
  • Manufactured to meet standard quality checks, providing dependable operation over extended use.
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产品上方询盘

2N3765-Transistor Overview

The 2N3765 is a high-power NPN bipolar junction transistor designed for efficient switching and amplification in industrial and power electronics applications. It features robust collector current capacity and high voltage ratings, making it suitable for medium to high power stages. With a maximum collector current of 10A and collector-emitter voltage up to 100V, it supports demanding environments requiring reliable performance. Its TO-3 metal can package enhances thermal dissipation, improving durability under continuous operation. This transistor is well-suited for power regulation, audio amplification, and motor control circuits. For sourcing and detailed technical support, visit IC Manufacturer.

2N3765-Transistor Key Features

  • High Collector Current Handling: Supports up to 10A continuous current, enabling use in power-intensive circuits.
  • Elevated Voltage Ratings: Collector-Emitter voltage of 100V provides margin for high-voltage applications, enhancing reliability.
  • TO-3 Package Thermal Efficiency: Metal can package improves heat dissipation, leading to stable operation under heavy loads.
  • High Gain Capability: Current gain (hFE) in the range of 20 to 70 facilitates efficient amplification with minimal input drive.

2N3765-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 120 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Continuous) IC 10 A
Power Dissipation PD 115 W
Current Gain (hFE) hFE 20 to 70 ??
Transition Frequency fT 4 MHz
Junction Temperature TJ 200 ??C

2N3765-Transistor Advantages vs Typical Alternatives

This transistor offers a superior balance of high current capability and voltage tolerance compared to many similar power transistors, ensuring more reliable operation in high-load scenarios. Its metal TO-3 package enhances thermal management, reducing thermal resistance and improving device longevity. The moderate gain and stable frequency response make it an efficient choice for power amplification and switching applications where robustness and consistent performance are critical.

Typical Applications

  • Power Amplifiers: Ideal for audio and industrial power amplification circuits requiring high current and voltage handling.
  • Switching Regulators: Used in power supply designs for controlling large current loads with efficient switching characteristics.
  • Motor Control Circuits: Suitable for driving motors in industrial automation due to its power capacity and thermal durability.
  • General-Purpose Power Switching: Effective in relay drivers and other switching applications demanding reliable transistor performance.

2N3765-Transistor Brand Info

The 2N3765 transistor is a classic power transistor widely recognized in the semiconductor industry for its rugged construction and dependable electrical characteristics. Packaged in a durable TO-3 metal can, this device is manufactured to meet stringent quality standards for industrial and commercial use. It has maintained relevance due to its versatility and proven track record in demanding power electronics applications, supported by comprehensive datasheets that enable precise engineering integration.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 10 amperes, making it suitable for applications that require handling high current loads without compromising performance.

What package type does this transistor use, and why is it significant?

This device uses a TO-3 metal can package, which offers excellent heat dissipation properties. The robust packaging helps maintain stable operation under high power and temperature conditions.

Can this transistor be used in audio amplifier circuits?

Yes, the transistor’s high current capacity and voltage ratings make it well-suited for audio power amplification, delivering clean and reliable output in medium to high power audio stages.

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产品中间询盘

What is the typical current gain range for this transistor?

The current gain (hFE) typically ranges from 20 to 70, which supports efficient amplification with a relatively low input drive current, making the device versatile for different amplifier configurations.

What are the thermal limits of this transistor during operation?

The maximum junction temperature is rated up to 200??C, enabling the transistor to operate safely under demanding thermal conditions when appropriately mounted and cooled.

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