JANTX2N2907AUA-Transistor PNP Power Amplifier Transistor in TO-18 Metal Can Package

JANTX2N2907AUA-Transistor Overview

The JANTX2N2907AUA is a high-reliability PNP bipolar junction transistor designed for military and aerospace applications requiring stringent quality standards. This transistor offers robust performance with a collector-emitter voltage rating of 60V and a continuous collector current of 600mA, making it suitable for switching and amplification tasks in demanding environments. Manufactured with precision and built to withstand rigorous conditions, it ensures dependable operation in critical circuits. Its hermetically sealed TO-18 metal can package enhances thermal stability and mechanical durability. Available through IC Manufacturer, this component supports engineers and sourcing specialists seeking reliable, high-performance transistors for industrial-grade applications.

JANTX2N2907AUA-Transistor Key Features

• High Voltage Capability: With a collector-emitter voltage rating of 60V, it supports medium-power switching and amplification, essential for robust circuit design.
• Moderate Current Handling: Continuous collector current of 600mA allows for effective control in signal amplification and low to medium power applications.
• Hermetic TO-18 Package: Provides enhanced protection against environmental factors, ensuring long-term reliability in harsh industrial and military settings.
• Low Transition Frequency: Suitable for low-frequency amplification, which is ideal for audio and control circuits requiring stable gain and minimal distortion.

JANTX2N2907AUA-Transistor Technical Specifications

JANTX2N2907AUA-Transistor Advantages vs Typical Alternatives

This transistor offers superior environmental resistance and reliability compared to standard commercial types, thanks to its hermetically sealed metal can package. Its extended operating temperature range and moderate power handling make it ideal for industrial and military-grade applications. The device balances current capacity and voltage tolerance with precision gain characteristics, providing engineers with a dependable solution where accuracy, ruggedness, and longevity are critical.

Typical Applications

• Signal amplification in aerospace and military-grade communication systems, where reliability under extreme conditions is mandatory.
• Switching circuits in industrial control systems requiring moderate power handling and consistent performance.
• Audio frequency amplification in instrumentation and control equipment with low noise and stable gain demands.
• General-purpose transistor functions in harsh environment electronics, ensuring durability and stable operation.

JANTX2N2907AUA-Transistor Brand Info

The JANTX2N2907AUA is part of the JAN (Joint Army-Navy) series, known for stringent military specifications and enhanced reliability. This transistor is manufactured under rigorous quality controls to meet or exceed MIL-STD-883 standards, ensuring suitability for defense, aerospace, and other mission-critical applications. The JAN designation signifies a trusted pedigree in high-reliability electronics, making it a preferred choice for engineers requiring certified, long-life components.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current is 600mA, allowing the transistor to handle moderate power levels suitable for amplification and switching in various electronic circuits.

What type of package does this transistor use and why is it important?

This device uses a hermetically sealed TO-18 metal can package, which provides superior protection against moisture, contaminants, and mechanical stress, making it ideal for harsh and high-reliability applications.

Can this transistor operate at high temperatures?

Yes, it supports an operating temperature range from -55??C up to +200??C, enabling functionality in extreme environments typical of military and industrial applications.

What is the typical DC current gain (hFE) range for this device?

The DC current gain ranges from 60 to 300, which allows flexibility in design for signal amplification with stable and predictable performance.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of approximately 100 MHz, it is better suited for low to moderate frequency applications rather than high-frequency RF circuits.