JANTXV2N5667S-Transistor Overview
The JANTXV2N5667S is a high-reliability silicon NPN bipolar junction transistor designed for demanding aerospace and military-grade applications. Featuring a robust collector-emitter voltage rating of 60V and a continuous collector current of up to 1 ampere, this transistor supports high-gain amplification with a DC current gain (hFE) ranging from 40 to 320. The device is housed in a hermetically sealed TO-18 metal can package, ensuring superior environmental protection and long-term stability. Its military-grade JAN (Joint Army-Navy) qualification assures compliance with stringent quality and performance standards, making it an optimal choice for mission-critical circuits requiring consistent switching and amplification performance. Available through IC Manufacturer, it balances rugged design and electrical precision effectively.
JANTXV2N5667S-Transistor Key Features
- High Voltage Handling: Supports collector-emitter voltage up to 60V, enabling reliable operation in moderately high-voltage circuits.
- Wide DC Current Gain Range: Offers hFE between 40 and 320, allowing flexible gain settings for various amplification needs.
- Robust Military-Grade Construction: Hermetically sealed TO-18 package ensures enhanced protection against moisture, dust, and mechanical stress.
- High Collector Current Capacity: Rated for 1A continuous collector current, suitable for moderate power switching and amplification tasks.
JANTXV2N5667S-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current, Continuous (IC) | 1 | A |
| DC Current Gain (hFE) | 40 to 320 | Unitless |
| Power Dissipation (Ptot) | 1 | W |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | TO-18 | Metal Can |
JANTXV2N5667S-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its military-grade JAN certification, ensuring superior reliability under harsh environments compared to commercial-grade alternatives. Its hermetically sealed TO-18 metal can package provides enhanced protection against contaminants and mechanical stress, which is crucial for aerospace and defense applications. The wide current gain range and robust voltage ratings offer design flexibility while maintaining consistent performance in sensitive amplification and switching circuits.
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Typical Applications
- Used extensively in aerospace and military electronic systems where high reliability and environmental resistance are critical, including flight control and communication equipment.
- Suitable for general-purpose amplification tasks in high-reliability analog signal processing circuits.
- Effective in switching applications requiring moderate current handling and voltage tolerance.
- Applicable in precision measurement systems that demand stable transistor gain over a wide temperature range.
JANTXV2N5667S-Transistor Brand Info
The JANTXV2N5667S transistor is part of a rigorous line of military-grade silicon transistors produced to meet stringent JAN (Joint Army-Navy) standards. This classification guarantees thorough screening and quality assurance processes, ensuring devices can withstand extreme environmental and electrical stresses. Designed and manufactured with a focus on durability and performance, it serves as a trusted component within critical defense and aerospace platforms. The brand??s commitment to delivering reliable semiconductor devices ensures consistent product availability for high-reliability system integrators and engineers.
FAQ
What does the JAN qualification mean for this transistor?
JAN qualification indicates that the transistor meets strict military standards for quality, reliability, and performance. Devices undergo extensive screening and testing to ensure they operate effectively in harsh environments, such as extreme temperature, vibration, and humidity conditions commonly found in aerospace and defense applications.
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What type of package does the transistor use, and why is it important?
This transistor is housed in a TO-18 metal can package, which is hermetically sealed to protect the device from moisture, dust, and mechanical damage. This packaging enhances long-term reliability and stability, making it suitable for high-reliability applications where environmental factors could otherwise degrade performance.
What are the primary electrical limits I should consider when integrating this transistor?
Key electrical parameters include a maximum collector-emitter voltage of 60V, a collector current of up to 1A continuous, and a power dissipation limit of 1 watt. Staying within these limits ensures device longevity and reliable operation within designed circuits.
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Can this transistor be used in high-frequency applications?
Yes, with a transition frequency (fT) of approximately 100 MHz, this transistor is suitable for moderate high-frequency applications. It provides stable gain and switching capabilities in RF circuits and other signal processing uses requiring frequencies in this range.
How does the DC current gain (hFE) range affect circuit design?
The DC current gain range of 40 to 320 allows designers to select biasing and load conditions to optimize amplifier performance or switching characteristics. This flexibility helps tailor the device??s amplification properties to specific circuit requirements, improving overall system efficiency.
