JANKCBD2N3700-Transistor-Die Overview
The JANKCBD2N3700-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for efficient switching and amplification applications. This transistor die offers reliable electrical characteristics with a focus on low leakage current and robust current handling capabilities. Engineered to support a collector current up to 200mA and a collector-emitter voltage of 60V, it is suitable for integration into compact semiconductor packages for industrial and consumer electronics. The die??s precise construction ensures stable gain and dependable operation under moderate power dissipation levels. Available through IC Manufacturer, it is optimized for applications requiring consistent switching performance and linear amplification.
JANKCBD2N3700-Transistor-Die Key Features
- High Collector Current Capability: Supports up to 200mA collector current, enabling effective control in moderate power circuits.
- Moderate Voltage Rating: Collector-emitter voltage of 60V allows use in a wide range of signal processing and switching environments.
- Low Leakage Current: Ensures minimal off-state current, improving overall circuit efficiency and reducing power loss.
- Stable DC Current Gain (hFE): Provides consistent amplification performance across specified operating ranges.
- Compact Die Form Factor: Ideal for integration into custom semiconductor assemblies or hybrid modules.
- Reliable Thermal Dissipation: Maximum power dissipation of 300mW supports stable operation under typical load conditions.
- Robust Breakdown Voltages: Ensures device longevity and protects against voltage spikes in industrial applications.
JANKCBD2N3700-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 200 | mA |
| Power Dissipation (PD) | 300 | mW |
| DC Current Gain (hFE) | 100?C300 | ?? |
| Transition Frequency (fT) | 100 | MHz |
| Storage Temperature Range | -65 to +150 | ??C |
| Operating Junction Temperature | 150 | ??C |
JANKCBD2N3700-Transistor-Die Advantages vs Typical Alternatives
This transistor die provides a balanced combination of voltage rating, current capacity, and gain stability that outperforms many generic alternatives in its class. Its low leakage current and reliable power dissipation ensure higher efficiency and longer operational life. Compared to typical transistor dies, the JANKCBD2N3700 excels in integration flexibility and consistent switching response, making it a preferred choice for engineers requiring dependable transistor performance in compact device assemblies.
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Typical Applications
- Signal amplification in low to medium power electronic circuits, facilitating reliable gain control and linear operation in analog systems.
- Switching components in power management modules where moderate current and voltage handling are essential.
- Integration in custom hybrid semiconductor modules for industrial control systems requiring stable transistor characteristics.
- Use in prototype development and semiconductor research where bare transistor dies enable tailored circuit design.
JANKCBD2N3700-Transistor-Die Brand Info
The JANKCBD2N3700-Transistor-Die is a product offered by IC Manufacturer, a recognized supplier specializing in semiconductor components for industrial and electronic applications. This transistor die reflects the brand??s commitment to quality, precision manufacturing, and reliable performance. Designed for engineers and sourcing specialists, it supports the latest integration requirements for circuit designers seeking durable and efficient transistor solutions at the die level.
FAQ
What are the voltage limits of the JANKCBD2N3700 transistor die?
The transistor die supports a collector-emitter voltage of up to 60V and a collector-base voltage up to 75V, making it suitable for moderate voltage applications commonly found in signal amplification and switching circuits.
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What is the maximum collector current this transistor die can handle?
This device can handle a maximum collector current of 200mA, providing sufficient current capacity for a range of low to medium power applications where reliable switching or amplification is required.
How does the power dissipation rating affect usage?
The maximum power dissipation of 300mW limits the device to applications with moderate power levels. Proper thermal management is necessary to maintain device reliability and prevent overheating during operation.
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What is the typical gain range for this transistor die?
The DC current gain (hFE) typically ranges between 100 and 300, ensuring consistent amplification performance suitable for analog signal processing and switching tasks.
Can this transistor die be used in high-frequency applications?
Yes, with a transition frequency around 100 MHz, it is capable of operating efficiently in moderate high-frequency environments, making it applicable for RF and switching circuits within its specified frequency range.
