JANTXV2N4449-Transistor by JAN | High-Speed Switching Transistor | TO-92 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in electronic circuits.
  • It operates with a voltage rating suitable for diverse applications, ensuring stable performance under varying conditions.
  • The compact package design supports board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for signal amplification in communication devices, it enhances clarity and responsiveness in real-time processing.
  • Manufactured under strict quality controls, it offers consistent reliability for long-term electronic system operation.
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JANTXV2N4449-Transistor Overview

The JANTXV2N4449-Transistor is a high-performance NPN bipolar junction transistor designed for reliable switching and amplification in demanding industrial and military applications. Engineered to meet JAN (Joint Army-Navy) standards, it offers enhanced ruggedness, stable gain, and excellent frequency response. With a maximum collector-emitter voltage of 80 V and a collector current rating of 600 mA, this transistor provides robust operation in precision circuits requiring consistent performance under harsh environmental conditions. Sourced from a trusted IC Manufacturer, it ensures reliability and long-term stability for critical electronic systems.

JANTXV2N4449-Transistor Key Features

  • High voltage tolerance: Rated for 80 V collector-emitter voltage, enabling use in high-voltage switching applications with minimized risk of breakdown.
  • Robust current handling: Supports up to 600 mA collector current, suitable for moderate power amplification tasks.
  • Military-grade reliability: Manufactured to JAN standards, ensuring superior durability and performance in extreme temperature ranges.
  • Consistent gain (hFE): Provides stable current gain between 40 and 300, allowing precision control in analog amplification circuits.
  • Fast switching speeds: Low transition frequency (fT) of 100 MHz facilitates efficient operation in high-frequency signal processing.
  • Thermal performance: Maximum junction temperature of 200??C supports operation in thermally demanding environments.
  • Versatile TO-18 package: Compact metal can package enables easy integration into space-constrained designs with excellent heat dissipation.

JANTXV2N4449-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40 to 300
Transition Frequency (fT) 100 MHz
Junction Temperature (TJ) 200??C max
Package TO-18 Metal Can

JANTXV2N4449-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced voltage and current ratings compared to many standard small-signal transistors, making it ideal for robust switching and amplification tasks. Its military-grade certification ensures higher reliability under temperature extremes, while the TO-18 package provides superior thermal management versus plastic housings. The wide current gain range allows precise circuit tuning, and the high transition frequency supports faster switching speeds, giving it a clear advantage in industrial and aerospace electronics.

Typical Applications

  • Signal amplification in communication equipment requiring stable gain and high-frequency response under harsh conditions.
  • Switching elements in control systems where reliability and voltage tolerance are critical.
  • Military and aerospace electronics demanding JAN-standard components for improved ruggedness and longevity.
  • Precision analog circuits and sensor interfaces that benefit from low noise and consistent transistor behavior.

JANTXV2N4449-Transistor Brand Info

The JANTXV2N4449-Transistor is a certified military-grade product manufactured in accordance with Joint Army-Navy (JAN) quality standards. This designation guarantees rigorous testing for environmental resilience, electrical stability, and longevity. Designed by a reputable semiconductor maker, it reflects a commitment to high reliability and performance consistency, making it a preferred choice for engineers sourcing components for mission-critical industrial and defense applications.

FAQ

What is the maximum voltage rating for this transistor?

The transistor is rated for a maximum collector-emitter voltage of 80 volts, allowing it to operate safely in circuits with higher voltage demands without risk of breakdown or damage.

Can this transistor handle high current loads?

Yes, it supports collector currents up to 600 mA, which makes it suitable for moderate power amplification and switching tasks in various industrial and communication applications.

What package type does this device use, and why is it important?

This transistor is housed in a TO-18 metal can package, which offers excellent thermal dissipation and mechanical robustness, key for reliable operation in environments with temperature fluctuations or mechanical stress.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

With a transition frequency of approximately 100 MHz, it is well-suited for moderate to high-frequency signal processing, including RF amplification and fast switching circuits.

What certifications or quality standards does this transistor meet?

It complies with JAN (Joint Army-Navy) standards, ensuring the device meets stringent military specifications for reliability, electrical performance, and environmental endurance.

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