JANKCBR2N3700-Transistor-Die Overview
The JANKCBR2N3700-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for use in discrete and integrated circuit applications. Known for its robust electrical characteristics and reliable switching capabilities, this transistor die offers excellent gain and breakdown voltage parameters that suit a wide range of amplification and switching functions. Its compact die form factor enables efficient integration into semiconductor packages and custom assemblies. Engineers and sourcing specialists will find this component ideal for precision control and signal amplification in industrial and consumer electronics. For detailed manufacturing and procurement information, visit IC Manufacturer.
JANKCBR2N3700-Transistor-Die Key Features
- High Current Gain (hFE): Ensures enhanced amplification performance, maximizing signal integrity in analog circuits.
- Collector-Emitter Voltage (VCEO) Rated: Supports voltages up to 40V, providing reliable operation in moderate voltage applications.
- Low Collector-Emitter Saturation Voltage: Minimizes power loss and heat generation, improving overall efficiency in switching applications.
- Compact Die Form: Facilitates seamless integration into semiconductor packages, optimizing space and enabling scalable manufacturing.
JANKCBR2N3700-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor Die |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 200 mA (max) |
| Gain Bandwidth Product (fT) | 300 MHz (typical) |
| DC Current Gain (hFE) | 100-300 (typical range) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.0 V (max) |
| Transition Frequency | 300 MHz (typical) |
| Junction Temperature (Tj) | 150??C (max) |
| Package | Die form (bare silicon) |
JANKCBR2N3700-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior gain and voltage handling compared to many standard NPN dies, enabling more precise signal amplification and switching. Its low saturation voltage reduces power dissipation, enhancing efficiency in power-sensitive applications. The bare die format allows for flexible packaging and integration, providing an advantage in custom semiconductor solutions and space-constrained designs.
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Typical Applications
- Signal amplification in analog circuits, where consistent gain and low distortion are critical for audio and sensor interfaces.
- Switching components in power control units requiring fast response and reliability.
- Integration into custom semiconductor modules for industrial control systems and instrumentation.
- Use in low to medium power driver circuits within consumer electronic devices and communication equipment.
JANKCBR2N3700-Transistor-Die Brand Info
The JANKCBR2N3700-Transistor-Die is produced by a leading semiconductor manufacturer specializing in discrete transistor components designed for industrial and consumer electronics. This product reflects the brand??s commitment to delivering high-quality transistor dies with consistent electrical performance and reliability, supporting advanced electronics manufacturing and design.
FAQ
What type of transistor is the JANKCBR2N3700-Transistor-Die?
This is an NPN bipolar junction transistor (BJT) die, intended for amplification and switching applications in discrete or integrated circuits. It offers typical characteristics of an NPN transistor with specific voltage and current ratings suitable for moderate power uses.
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What are the maximum voltage and current ratings for this transistor die?
The transistor die is rated for a maximum collector-emitter voltage (VCEO) of 40 volts and a maximum collector current (IC) of 200 milliamps, making it suitable for a range of low to medium power applications.
How does the transistor die format benefit electronic device manufacturing?
The bare die format allows engineers to integrate the transistor directly onto custom substrates or within multi-chip modules, offering space-saving advantages and flexibility in advanced packaging and assembly processes.
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What is the typical gain bandwidth product for this transistor die?
The typical gain bandwidth product (fT) is around 300 MHz, enabling the device to perform well in high-frequency signal amplification and switching tasks, beneficial for RF and analog circuit designs.
Can this transistor die operate under high temperature conditions?
Yes, the maximum junction temperature for this transistor die is 150??C, which supports operation in demanding thermal environments typical in industrial electronics and power control systems.
