JANKCB2N3700-Transistor-Die High-Power Amplifier Transistor Chip ?C Bare Die Package

  • This transistor die provides precise signal amplification, enabling efficient circuit performance in electronic designs.
  • Its electrical characteristics support stable operation under varying loads, ensuring consistent functionality in diverse conditions.
  • The compact die size allows for reduced board space, facilitating integration into densely packed circuit assemblies.
  • Ideal for use in switching applications, it enhances response times and improves overall system reliability in power control.
  • Manufactured with stringent quality controls, the component offers dependable long-term operation and minimal failure rates.
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产品上方询盘

JANKCB2N3700-Transistor-Die Overview

The JANKCB2N3700-Transistor-Die is a high-performance semiconductor die designed for amplification and switching applications in industrial and electronic circuits. This transistor die provides reliable operation with precise electrical characteristics, making it suitable for integration into custom IC modules or discrete transistor assemblies. Its compact die form factor facilitates efficient thermal management and ease of assembly in various manufacturing processes. Engineers and sourcing specialists will find this transistor die valuable for developing robust electronic solutions requiring consistent gain and low noise performance. For detailed technical support and procurement, visit IC Manufacturer.

JANKCB2N3700-Transistor-Die Key Features

  • High current gain: Ensures effective signal amplification, improving circuit sensitivity and overall performance.
  • Low noise operation: Critical for maintaining signal integrity in sensitive electronic systems.
  • Robust breakdown voltage: Supports reliable switching under varying load conditions, enhancing device longevity.
  • Compact die size: Enables efficient thermal dissipation and streamlined integration into complex semiconductor assemblies.

JANKCB2N3700-Transistor-Die Technical Specifications

ParameterValue
TypeNPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vceo)60 V
Collector Current (Ic)200 mA
Power Dissipation (Pd)300 mW (die level)
DC Current Gain (hFE)100 ?C 300
Transition Frequency (fT)100 MHz (typical)
Noise FigureLow (suitable for low-noise applications)
PackageDie form (bare semiconductor die)
Operating Temperature Range-55 to +150 ??C

JANKCB2N3700-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior gain and low noise characteristics compared to standard discrete transistors, making it ideal for sensitive amplification tasks. Its robust voltage ratings and compact die format provide enhanced reliability and thermal efficiency, reducing failure rates in demanding industrial environments. The bare die format supports custom packaging and integration, granting engineers flexibility not always possible with packaged devices.

Typical Applications

  • Signal amplification in analog circuits where high gain and low noise are critical to system accuracy and stability.
  • Switching elements in power control modules requiring reliable operation under moderate current load.
  • Integration in hybrid ICs or multi-chip modules for specialized industrial electronics.
  • Low-noise preamplifier stages in communications and sensor interface designs.

JANKCB2N3700-Transistor-Die Brand Info

The JANKCB2N3700-Transistor-Die is manufactured by IC Manufacturer, a leading supplier specializing in semiconductor dies and discrete components for industrial and commercial electronics. This product reflects the company??s commitment to delivering precision-engineered transistor dies with consistent electrical properties and high reliability. The die is rigorously tested to meet stringent quality standards, making it a dependable choice for engineers designing advanced electronic systems.

FAQ

What type of transistor is the JANKCB2N3700-Transistor-Die?

This transistor die is an NPN bipolar junction transistor (BJT), designed primarily for amplification and switching applications in various electronic circuits.

What is the maximum collector current rating?

The maximum collector current (Ic) for this transistor die is 200 mA, allowing it to handle moderate current loads typical in signal processing and control circuits.

Can this transistor die be used in high-frequency applications?

Yes, with a typical transition frequency (fT) of around 100 MHz, it is suitable for moderate high-frequency applications including RF amplification and fast switching tasks.

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产品中间询盘

What operating temperature range does the transistor die support?

The device is rated for operation from -55??C up to +150??C, making it appropriate for demanding industrial environments where temperature extremes are common.

Is the JANKCB2N3700-Transistor-Die a packaged device?

No, this is a bare die, which means it requires custom packaging or integration into multi-chip modules or hybrid circuits, offering design flexibility for specialized applications.

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