JAN2N2369AUB-Transistor by JAN | NPN General Purpose Transistor | TO-18 Metal Package

  • This transistor amplifies electrical signals, improving circuit performance and signal strength.
  • It features a high voltage rating, ensuring stable operation under demanding electrical conditions.
  • The compact package offers efficient board-space usage, suitable for dense electronic assemblies.
  • Ideal for switching applications, it enables precise control in power management circuits.
  • Designed with robust construction to maintain reliability across varied environmental stresses.
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产品上方询盘

JAN2N2369AUB-Transistor Overview

The JAN2N2369AUB transistor is a robust NPN bipolar junction transistor designed for high-speed switching and low-noise amplification applications. With its military-grade JAN (Joint Army-Navy) specification, it ensures superior reliability and consistent performance under demanding environmental conditions. This transistor features a medium power and voltage rating suitable for a wide range of industrial and aerospace electronics. Its compact SOT-23 surface-mount package optimizes PCB space, making it ideal for modern high-density circuit designs. Sourced from a reputable IC Manufacturer, this device meets stringent quality standards for critical applications requiring stable gain and fast response times.

JAN2N2369AUB-Transistor Key Features

  • High transition frequency (fT): Enables fast switching speeds critical for RF and high-frequency signal amplification.
  • Low collector-emitter saturation voltage (VCE(sat)): Reduces power loss, improving overall circuit efficiency and thermal management.
  • Military-grade JAN qualification: Guarantees enhanced reliability and extended operational life under harsh temperature and mechanical stress.
  • Small SOT-23 surface-mount package: Facilitates compact PCB layouts while maintaining excellent thermal dissipation.

JAN2N2369AUB-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 30 V
Collector Current (IC) 0.8 A (800 mA)
Transition Frequency (fT) 100 MHz (typical)
Power Dissipation (Pd) 350 mW
Gain Bandwidth Product (hFE) 100 to 300 (varies by test conditions)
Package Type SOT-23 Surface-Mount
Operating Temperature Range -55??C to +125??C
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 5 V

JAN2N2369AUB-Transistor Advantages vs Typical Alternatives

This transistor delivers a combination of high-frequency performance and military-grade reliability, which typical commercial transistors may not offer. Its low saturation voltage minimizes power losses, enhancing efficiency in switching circuits. The compact SOT-23 package supports modern surface-mount technology, making it easier to integrate into space-constrained industrial and aerospace designs. Overall, it provides improved switching speed and gain stability compared to standard transistors, ensuring consistent operation in harsh environments.

Typical Applications

  • High-speed switching in signal processing circuits, where fast response and low noise are essential for accurate data transmission and amplification.
  • Low-noise preamplifiers in communication equipment, maximizing signal integrity with minimal distortion.
  • Industrial control systems, providing reliable switching and amplification for sensor interfaces and actuator drivers.
  • Aerospace and defense electronics requiring MIL-spec components for operation under extreme temperature and mechanical stress.

JAN2N2369AUB-Transistor Brand Info

The JAN2N2369AUB transistor is a premium product manufactured to meet Joint Army-Navy (JAN) standards, ensuring military-grade quality and performance. This designation reflects rigorous screening and testing to guarantee durability, reliability, and consistent electrical characteristics. The brand behind this device is recognized for supplying components that comply with strict military specifications, offering engineers dependable solutions for critical applications. The transistor??s packaging and specifications reflect an emphasis on miniaturization without compromising robustness, catering to advanced industrial and aerospace markets.

FAQ

What is the typical application environment for the JAN2N2369AUB transistor?

This transistor is designed for use in demanding environments such as aerospace and military electronics. It operates reliably across a wide temperature range from -55??C to +125??C and withstands mechanical and thermal stress, making it suitable for harsh industrial applications.

How does the SOT-23 package benefit circuit designers?

The SOT-23 surface-mount package offers a compact footprint that saves PCB space while providing good thermal performance. This enables high-density circuit assembly and easier automated manufacturing, which is crucial for modern electronic devices requiring miniaturization.

What are the key electrical limits to consider when using this transistor?

Key limits include a maximum collector-emitter voltage of 30 V, a collector current rating up to 800 mA, and power dissipation of 350 mW. Exceeding these ratings can damage the device or degrade performance, so appropriate circuit design and thermal management are essential.

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产品中间询盘

Is this transistor suitable for RF amplification?

Yes, with a transition frequency around 100 MHz, this transistor supports moderate RF applications. Its low noise and stable gain make it a good choice for signal amplification in communication and high-frequency switching circuits.

What does the JAN qualification imply for reliability?

JAN qualification means the transistor has passed stringent military testing protocols, including screening for temperature extremes, mechanical shock, and electrical performance consistency. This certification assures users of enhanced reliability and long-term operation in critical systems.

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