JAN2N2605-Transistor Overview
The JAN2N2605 is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and military-grade electronics. Known for its robust construction and reliable operation under demanding conditions, this transistor offers a maximum collector-emitter voltage of 100V and a collector current rating of up to 1.5A. It supports medium power dissipation and is housed in a TO-18 metal can package, ensuring superior thermal management and durability. This device is well-suited for use in analog circuits, signal processing, and power regulation. For detailed procurement and technical support, visit IC Manufacturer.
JAN2N2605-Transistor Key Features
- High Voltage Handling: With a collector-emitter voltage rating of 100V, it supports applications requiring robust voltage endurance, minimizing breakdown risk.
- Moderate Collector Current Capacity: The 1.5A maximum collector current allows efficient switching and amplification in medium-power circuits, enhancing versatility.
- Metal Can TO-18 Package: Provides excellent thermal conductivity and mechanical strength, improving reliability and heat dissipation in harsh environments.
- Gain Consistency: Featuring a DC current gain (hFE) range suitable for stable amplification performance, ensuring predictable circuit behavior.
JAN2N2605-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector-Base Voltage (Vcbo) | 120 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 1.5 A |
| Power Dissipation (Pc) | 1 W |
| DC Current Gain (hFE) | 40 to 160 (varies by test conditions) |
| Transition Frequency (fT) | 80 MHz (typical) |
| Package Type | TO-18 Metal Can |
JAN2N2605-Transistor Advantages vs Typical Alternatives
This transistor provides a favorable balance of voltage tolerance and current handling compared to typical low-power alternatives. Its metal can packaging enhances thermal stability and mechanical robustness, reducing failure rates in critical applications. The wide DC current gain range offers design flexibility, while the 80 MHz transition frequency supports moderately high-speed switching. These advantages make it a reliable choice for engineers prioritizing durability and consistent performance.
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Typical Applications
- Switching circuits in industrial control systems where reliable medium power switching is required under variable load conditions.
- Signal amplification in communication equipment requiring stable gain and moderate frequency response.
- Power regulation and driver stages in low-to-medium power analog circuits.
- Military and aerospace electronic assemblies demanding rugged, dependable transistors with strong thermal management.
JAN2N2605-Transistor Brand Info
This transistor is produced under the JAN (Joint Army-Navy) specification, ensuring compliance with rigorous military standards for reliability and performance. The JAN2N2605 is distinguished by its adherence to strict quality assurance protocols, making it suitable for defense and aerospace sectors as well as high-reliability industrial applications. The product is recognized for consistent manufacturing quality, traceability, and long-term availability from trusted suppliers.
FAQ
What type of transistor is the JAN2N2605 and what are its general uses?
The device is an NPN bipolar junction transistor designed primarily for switching and amplification. It is commonly used in industrial and military-grade electronics where moderate power handling and reliability are required.
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What are the maximum voltage and current ratings for this transistor?
The maximum collector-emitter voltage rating is 100 volts, while the maximum continuous collector current is rated at 1.5 amperes, making it suitable for medium power applications.
Why is the TO-18 metal can package important for this transistor?
The TO-18 metal can package offers enhanced thermal conductivity and mechanical protection, which improves heat dissipation and durability under harsh operating conditions, extending device lifespan.
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What is the typical current gain (hFE) range of this transistor?
The DC current gain typically ranges from 40 to 160 depending on the test conditions, providing flexibility to accommodate various circuit design requirements.
Can this transistor be used in high-frequency applications?
With a transition frequency around 80 MHz, it supports moderate high-frequency switching and amplification tasks but is not intended for ultra-high-frequency RF applications.
