JANTX2N3737UB-Transistor – High Power NPN Transistor in TO-3 Package by JANTX

  • This transistor switches electrical signals efficiently, enabling precise control in electronic circuits.
  • It supports high voltage operation, which ensures stable performance under demanding conditions.
  • The compact package reduces board space, allowing for more streamlined device designs.
  • Ideal for power amplification tasks, it helps improve signal strength in communication equipment.
  • Manufactured to meet stringent quality standards, it provides dependable long-term operation.
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JANTX2N3737UB-Transistor Overview

The JANTX2N3737UB is a high-power NPN bipolar junction transistor designed for demanding switching and amplification applications. Engineered to provide robust performance under high voltage and current conditions, it delivers reliable operation in industrial and military-grade environments. This transistor offers a collector-emitter voltage rating of up to 100 V and a collector current capability reaching 15 A, making it suitable for power regulation and control circuits. Its sturdy construction ensures durability and consistent functionality, meeting stringent quality standards. Available for procurement through IC Manufacturer, it supports engineers and sourcing specialists seeking dependable, high-performance discrete semiconductor solutions.

JANTX2N3737UB-Transistor Key Features

  • High Collector Current Capacity: Supports up to 15 A, enabling efficient handling of heavy load currents in power amplification and switching applications.
  • Voltage Endurance: Collector-emitter voltage rated at 100 V ensures robust operation in medium to high-voltage circuits, enhancing device reliability.
  • High Gain Performance: Offers a DC current gain (hFE) range of 40 to 160, allowing for flexible signal amplification with improved efficiency.
  • Thermal Stability: Designed to operate at junction temperatures up to 200??C, which enhances device longevity and reliability in demanding industrial environments.

JANTX2N3737UB-Transistor Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 15 A
DC Current Gain (hFE) 40 to 160 ??
Power Dissipation (PD) 115 W
Transition Frequency (fT) ?? MHz
Operating Junction Temperature (TJ) -65 to +200 ??C
Package Type TO-3 ??

JANTX2N3737UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage tolerance compared to many standard NPN transistors, making it ideal for high-power switching and amplification tasks. Its wide operating temperature range and robust package design provide enhanced reliability under harsh industrial conditions. These features contribute to increased system stability and longevity, setting it apart from typical alternatives with lower current ratings and less thermal endurance.

Typical Applications

  • Power Amplification: Suitable for audio and RF power amplification circuits where high current and voltage are needed to drive loudspeakers or RF loads effectively.
  • Switching Regulators: Ideal for use in high-power DC-DC converters and switching regulator circuits requiring efficient switching with minimal losses.
  • Industrial Motor Control: Can be integrated into motor driver circuits to manage induction and DC motors with precise current control.
  • Military and Aerospace: Due to its rugged design and reliability, it fits applications requiring strict quality and operational standards under extreme environments.

JANTX2N3737UB-Transistor Brand Info

The JANTX2N3737UB transistor is a military-grade semiconductor product known for its stringent quality and reliability standards. Its designation “JANTX” signifies compliance with Joint Army-Navy testing protocols, ensuring superior performance under demanding conditions. This product targets applications requiring robust, high-current, and high-voltage capability, backed by a trusted legacy in defense and industrial electronics sectors. Its TO-3 metal can package provides excellent thermal dissipation and mechanical stability, reinforcing its reputation as a dependable power transistor solution.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 15 amperes, allowing the device to handle significant load currents in power amplification or switching applications without compromising performance or reliability.

What package type does this transistor use, and why is it important?

This transistor uses the TO-3 metal can package, which provides excellent thermal conductivity and mechanical robustness. This package type helps dissipate heat efficiently, supporting high power operation and enhancing device longevity.

Can this transistor operate at high temperatures?

Yes, the device is rated for an operating junction temperature ranging from -65??C up to +200??C, making it suitable for harsh industrial or military environments where temperature extremes are common.

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What voltage levels can this transistor safely handle?

It supports a collector-emitter voltage of up to 100 V and a collector-base voltage of 120 V. These voltage ratings ensure reliable operation in medium to high-voltage circuits typical in power control applications.

How does the DC current gain (hFE) affect its performance?

The DC current gain ranges from 40 to 160, which means the transistor can amplify input signals effectively across a range of operating conditions. This flexibility helps optimize circuit design for both switching and linear amplification tasks.

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