JANKCC2N3499-Transistor-Die by JANKCC2N – High-Performance Amplifier Transistor Die

  • This transistor die enables efficient control of electrical signals, improving circuit performance and responsiveness.
  • The device supports a specified voltage rating, ensuring stable operation under typical load conditions.
  • Its compact die size allows for space-saving integration in densely packed electronic assemblies.
  • Ideal for use in amplifier circuits, it enhances signal amplification while maintaining thermal stability.
  • Manufactured under strict quality protocols, the component offers consistent reliability throughout its lifespan.
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产品上方询盘

JANKCC2N3499-Transistor-Die Overview

The JANKCC2N3499-Transistor-Die is a high-performance semiconductor component designed for precision amplification and switching applications. Engineered to deliver reliable operation under varied electrical conditions, this transistor die offers excellent gain characteristics and robust thermal stability. Its compact die format allows seamless integration into custom IC packages or hybrid modules, enhancing design flexibility. Ideal for engineers and sourcing specialists focused on industrial electronics and power management, this transistor die supports demanding applications where efficiency and durability are critical. For comprehensive supply and technical support, visit the IC Manufacturer.

JANKCC2N3499-Transistor-Die Key Features

  • High current gain: Enables efficient signal amplification, improving overall circuit performance.
  • Robust voltage tolerance: Supports operation at elevated voltages, enhancing device reliability in power circuits.
  • Thermal stability: Maintains consistent electrical characteristics under varying temperature conditions, ensuring dependable functionality.
  • Compact die size: Facilitates integration into diverse package types and space-constrained designs.

JANKCC2N3499-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)100 V
Collector Current (IC)10 A
Power Dissipation (Ptot)150 W
DC Current Gain (hFE)40 to 160
Transition Frequency (fT)100 MHz
Junction Temperature (Tj)150 ??C
Base-Emitter Voltage (VBE)5 V max
Package TypeDie (bare semiconductor)

JANKCC2N3499-Transistor-Die Advantages vs Typical Alternatives

The transistor die offers superior current handling and voltage tolerance compared to many standard semiconductor dies, granting enhanced power efficiency and signal fidelity. Its excellent thermal stability reduces performance drift over time, which is crucial for reliable industrial electronics. Additionally, the compact bare-die format allows designers greater flexibility for custom packaging and integration, distinguishing it from pre-packaged alternatives.

Typical Applications

  • Power amplifier stages in audio and RF circuits, benefiting from high gain and power dissipation capabilities to drive demanding loads with minimal distortion.
  • Switching applications in industrial control systems where reliable high-voltage operation is essential.
  • Custom hybrid IC modules requiring bare-die semiconductor components for optimized space utilization and thermal management.
  • Signal processing circuits in instrumentation and measurement devices needing stable transistor performance over wide temperature ranges.

JANKCC2N3499-Transistor-Die Brand Info

This transistor die is manufactured under stringent quality controls by a reputable supplier specializing in advanced semiconductor components. The brand is known for delivering precise, durable, and high-reliability devices tailored for industrial and high-performance electronics markets. Their transistor dies are engineered to meet rigorous electrical and thermal specifications, supporting complex designs and demanding applications with consistent results.

FAQ

What is the maximum collector current rating for this transistor die?

The maximum collector current rating is 10 amperes, allowing the die to handle significant current loads suitable for power amplification and switching applications.

Can this transistor die operate reliably at high temperatures?

Yes, it is specified to operate with a junction temperature up to 150 ??C, ensuring stable performance even in thermally challenging environments common in industrial electronics.

Is the JANKCC2N3499 suitable for RF applications?

With a transition frequency of approximately 100 MHz, this transistor die is capable of use in moderate-frequency RF circuits, such as power amplifiers within audio and communication equipment.

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产品中间询盘

What packaging options are available for this transistor die?

The product is supplied as a bare semiconductor die, offering flexibility for custom packaging or integration into hybrid modules tailored to specific design requirements.

How does the transistor die??s gain vary across its operating range?

The DC current gain ranges from 40 to 160, providing reliable amplification across different operating points and ensuring adaptability to various circuit designs.

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