JANKCC2N3500-Transistor-Die High-Power Amplifier Transistor in Die Package

  • This transistor die enables precise amplification and switching, improving circuit performance and control.
  • Its electrical characteristics support stable operation under varying conditions, ensuring consistent signal integrity.
  • The compact die format reduces board space, facilitating integration into densely packed electronic assemblies.
  • Ideal for use in power regulation circuits, it enhances efficiency and responsiveness in real-world applications.
  • Manufactured with stringent quality controls, the device offers dependable performance over extended usage periods.
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产品上方询盘

JANKCC2N3500-Transistor-Die Overview

The JANKCC2N3500-Transistor-Die is a robust bipolar junction transistor die designed for high voltage and power amplification applications. Engineered to deliver reliable switching and amplification performance, this transistor die offers a collector-emitter voltage rating suitable for demanding industrial environments. Its die form factor enables seamless integration into customized semiconductor packages or hybrid circuits, facilitating advanced power management solutions. With precise electrical characteristics and stable thermal performance, the device is ideal for engineers seeking a dependable transistor die for power control and signal amplification. For detailed sourcing and technical support, visit IC Manufacturer.

JANKCC2N3500-Transistor-Die Key Features

  • High voltage rating: Supports collector-emitter voltages up to 350 V, enabling use in high-voltage switching and amplification circuits.
  • Moderate current handling: Collector current capability of 0.5 A allows for efficient power control in mid-power applications.
  • Low saturation voltage: Ensures minimal power loss during conduction, improving overall system efficiency and thermal management.
  • Die form factor: Provides flexibility for custom packaging and integration into hybrid modules, facilitating tailored circuit designs.

JANKCC2N3500-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (Vce)350 V
Collector Current (Ic)0.5 A
Power Dissipation (Pd)Variable, dependent on package and cooling
Gain Bandwidth Product (fT)Data not specified
Transition FrequencyNot provided
Base-Emitter Voltage (Vbe)Approximately 0.7 V typical
Junction Temperature (Tj)Maximum 150??C (typical for silicon BJTs)
Die DimensionsStandard die size for discrete transistor integration

JANKCC2N3500-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers a high collector-emitter voltage rating and moderate current capacity that provide superior performance in high-voltage switching applications compared to typical low-voltage BJTs. Its low saturation voltage minimizes conduction losses, enhancing reliability and power efficiency. The die format allows for flexible integration, making it advantageous for custom power modules and hybrid circuit designs where space and thermal management are critical.

Typical Applications

  • Power Amplification: Suitable for medium-power amplifier stages in industrial control equipment, providing stable gain and efficient power handling.
  • Switching Circuits: Effective in high-voltage switching applications such as relay drivers and power switches.
  • Signal Conditioning: Used in signal amplification within analog front-end circuits requiring robust transistor performance.
  • Hybrid Circuit Modules: Integration into custom hybrid semiconductor modules for tailored industrial electronics solutions.

JANKCC2N3500-Transistor-Die Brand Info

The JANKCC2N3500-Transistor-Die is a product offered by JANKCC, recognized for delivering high-quality semiconductor components tailored to industrial and power electronics markets. This transistor die exemplifies the brand??s commitment to precision manufacturing and reliable performance in power transistor solutions. JANKCC supports engineers and sourcing specialists with comprehensive technical documentation, ensuring seamless implementation into advanced electronic designs.

FAQ

What are the typical voltage and current ratings for the JANKCC2N3500-Transistor-Die?

The device is rated for a collector-emitter voltage of up to 350 V and a collector current of 0.5 A, making it suitable for mid-power and high-voltage applications in industrial electronics.

Can this transistor die be used directly in circuit designs?

As a transistor die, it requires appropriate packaging or integration into custom modules before mounting on circuit boards. This allows engineers to tailor the transistor??s use according to specific application requirements.

What advantages does the die format provide?

The die format enables flexible integration into hybrid circuits or custom semiconductor packages, offering designers greater control over thermal management and layout in complex power management systems.

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产品中间询盘

Is thermal management critical when using this transistor die?

Yes, thermal management is crucial because the die itself does not include a package with built-in heat dissipation. Proper cooling solutions must be implemented to maintain junction temperatures within safe limits.

Where can I find additional technical support or sourcing information?

Additional technical documentation and sourcing details are available through the official manufacturer??s website at IC Manufacturer, which provides comprehensive resources for engineers and purchasing specialists.

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