JANTX2N3439P-Transistor-PIND High-Power Switching Transistor – JANTX Package

  • This transistor controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • Its maximum collector-emitter voltage supports stable operation under varying electrical conditions.
  • The PIND package offers a compact footprint, saving valuable board space in dense circuit designs.
  • Ideal for switching applications, it enhances performance in power management and signal processing tasks.
  • Manufactured to meet stringent quality standards, ensuring dependable functionality over extended use.
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JANTX2N3439P-Transistor-PIND Overview

The JANTX2N3439P is a high-performance PNP bipolar junction transistor (BJT) designed for demanding electronic applications requiring robust switching and amplification. This transistor features a high voltage rating and reliable current handling capabilities, making it suitable for industrial and military-grade circuits. Engineered for durability and stability, it supports efficient signal processing with low noise and consistent gain characteristics. Its hermetically sealed PIND (Plastic-Inertial-Neutral Device) package enhances reliability under harsh environmental conditions. For detailed component sourcing and technical assistance, visit IC Manufacturer.

JANTX2N3439P-Transistor-PIND Key Features

  • High voltage capability: Supports collector-emitter voltages up to 80V, enabling use in high-voltage switching circuits.
  • Robust current handling: Collector current rating of 15A ensures reliable operation in power amplifiers and drivers.
  • Hermetically sealed PIND package: Provides enhanced protection against moisture and contaminants, improving long-term reliability in industrial environments.
  • Stable gain performance: Maintains consistent DC current gain (hFE) between 20 and 70 for predictable amplification.

JANTX2N3439P-Transistor-PIND Technical Specifications

ParameterSpecification
Transistor TypePNP Bipolar Junction Transistor
Maximum Collector-Emitter Voltage (Vceo)80 V
Maximum Collector Current (Ic)15 A
DC Current Gain (hFE)20 to 70
Power Dissipation (Pc)115 W
Transition Frequency (fT)8 MHz (typical)
Package TypeHermetically Sealed PIND
Operating Temperature Range-65??C to +200??C
Base-Emitter Voltage (Vbe)1.5 V (max)

JANTX2N3439P-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many standard BJTs, ensuring higher power handling and operational reliability. Its hermetic PIND packaging provides enhanced environmental protection, making it ideal for aerospace and military applications where moisture and contamination resistance are critical. Consistent gain and low noise improve overall circuit performance, delivering more precise and efficient amplification than typical devices.

Typical Applications

  • Power amplifier stages in industrial control systems requiring robust current and voltage handling capabilities.
  • Switching regulators and converters where high voltage and current ratings ensure dependable operation under variable loads.
  • Military and aerospace electronics benefiting from hermetic packaging for enhanced environmental resistance.
  • Signal amplification circuits demanding stable gain and low distortion in harsh operating conditions.

JANTX2N3439P-Transistor-PIND Brand Info

The JANTX2N3439P is a legacy transistor known for its rugged construction and reliable performance in demanding environments. Manufactured under stringent quality controls, it belongs to a family of semiconductors designed to meet military and industrial standards. The hermetic PIND package reflects the brand??s commitment to durability and long-term stability, ensuring this transistor remains a trusted choice for engineers requiring dependable, high-power transistor solutions.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current rating is 15 amperes, which allows this transistor to handle significant load currents in power amplifier and switching applications safely.

What type of package does this transistor use, and why is it important?

This transistor is housed in a hermetically sealed PIND package, which protects it from moisture, dust, and other environmental contaminants, enhancing reliability in rugged and harsh operating conditions.

Can this transistor operate at high temperatures?

Yes, it is rated for an operating temperature range from -65??C up to +200??C, making it suitable for applications requiring high thermal endurance and stability.

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What is the typical gain range (hFE) for this device?

The DC current gain typically ranges between 20 and 70, providing predictable and stable amplification across various circuit configurations.

Is this transistor suitable for aerospace or military applications?

Yes, due to its hermetic PIND packaging, high voltage and current ratings, and wide operating temperature range, this transistor is well-suited for aerospace and military-grade electronics demanding high reliability and environmental resistance.

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