JANTX2N5666S-Transistor by JAN | High-Power NPN Transistor | TO-3 Package

  • This transistor enables efficient signal amplification, improving circuit performance and response accuracy.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent functionality.
  • The compact package design allows for board-space savings in densely populated electronic assemblies.
  • Ideal for use in power management circuits, it enhances energy control and system reliability in real-world devices.
  • Manufactured with stringent quality controls, it offers dependable operation over extended periods and conditions.
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产品上方询盘

JANTX2N5666S-Transistor Overview

The JANTX2N5666S is a high-power NPN bipolar junction transistor designed for industrial and military-grade applications requiring robust switching and amplification performance. Engineered to handle significant collector currents and voltages, this transistor offers reliable operation in demanding environments. Its hermetically sealed metal can package ensures enhanced thermal stability and long-term durability. Ideal for use in power amplifiers, switching circuits, and control systems, the device provides engineers and sourcing specialists with a dependable semiconductor solution that meets stringent quality standards. For more detailed product data and sourcing information, visit the IC Manufacturer website.

JANTX2N5666S-Transistor Key Features

  • High Collector Current Capacity: Supports collector currents up to 15A, enabling efficient power handling in high-load applications.
  • Maximum Collector-Emitter Voltage: Rated for up to 60V, ensuring reliable operation under elevated voltage conditions.
  • Hermetically Sealed TO-3 Package: Enhances device longevity and thermal dissipation, critical for industrial and military environments.
  • High Gain Bandwidth Product: Facilitates effective amplification across a broad frequency range, optimizing signal integrity.

JANTX2N5666S-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 15 A
Power Dissipation (PD) 150 W
DC Current Gain (hFE) 30 (minimum)
Package Type Hermetically Sealed TO-3 Metal Can
Transition Frequency (fT) 4 MHz (typical)

JANTX2N5666S-Transistor Advantages vs Typical Alternatives

This transistor provides enhanced power handling and voltage tolerance compared to typical small-signal transistors. Its hermetically sealed TO-3 package offers superior thermal management and environmental protection, which increases reliability in harsh industrial and military settings. The high collector current capacity and stable gain make it advantageous for precision amplification and switching tasks where robustness and accuracy are critical.

Typical Applications

  • Power Amplification: Suitable for audio and RF power amplifier stages requiring high current and voltage capabilities within industrial environments.
  • Switching Regulators: Employed in DC-DC converter circuits for efficient power management and load switching.
  • Motor Control Systems: Effective for controlling medium to high-power electric motors in automation and robotics.
  • Military and Aerospace Electronics: Designed for rugged applications demanding high reliability and thermal endurance.

JANTX2N5666S-Transistor Brand Info

The JANTX2N5666S is a military-grade transistor manufactured under stringent quality controls to meet defense and aerospace standards. The ??JANTX?? prefix indicates a JAN (Joint Army-Navy) qualified device, ensuring compliance with rigorous performance and reliability criteria. This product is commonly sourced through specialized semiconductor suppliers catering to high-reliability sectors, reflecting its trusted status in critical industrial applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating is 15 amperes, allowing the device to handle substantial load currents in power amplification and switching applications without degradation.

Can this transistor operate reliably in high-temperature environments?

Yes, the hermetically sealed TO-3 metal can package provides excellent thermal dissipation and environmental protection, enabling reliable operation under elevated temperatures commonly encountered in industrial and military systems.

What are the voltage limits for safe operation of this transistor?

The collector-emitter voltage is rated at 60 volts maximum, the collector-base voltage at 100 volts, and the emitter-base voltage at 7 volts, defining the safe operating voltage range for the device.

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产品中间询盘

Is this transistor suitable for RF amplification?

While primarily designed for power switching and amplification, the device??s transition frequency of approximately 4 MHz makes it applicable for certain low to medium frequency RF amplification tasks.

Where can I source the JANTX2N5666S for industrial applications?

This transistor is available through authorized distributors specializing in military and industrial-grade components. It is recommended to consult IC Manufacturer or equivalent suppliers to ensure authenticity and compliance with required standards.

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