JANHCB2N3440-Transistor-Die Overview
The JANHCB2N3440-Transistor-Die is a high-performance semiconductor device designed for robust switching and amplification applications. Engineered with precision manufacturing processes, this transistor die offers reliable electrical characteristics essential for industrial and electronic system integration. Its compact die form factor facilitates seamless embedding into custom packages or hybrid circuits, enhancing design flexibility. With a focus on delivering consistent gain and efficient thermal management, this transistor die supports engineers and sourcing specialists seeking dependable components for power control and signal processing tasks. For detailed procurement and technical support, refer to the resources available at IC Manufacturer.
JANHCB2N3440-Transistor-Die Key Features
- High Current Handling: Supports collector currents up to 15A, enabling effective power switching in demanding circuits.
- Voltage Endurance: With a collector-emitter voltage rating of 250V, it ensures safe operation in high-voltage environments.
- Low Saturation Voltage: Minimizes power loss during conduction, improving overall system efficiency and reducing heat generation.
- Thermal Stability: Designed to withstand junction temperatures up to 150??C, enhancing reliability under thermal stress.
JANHCB2N3440-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 250 | V |
| Collector Current (Ic) | 15 | A |
| Power Dissipation (Ptot) | 75 | W |
| DC Current Gain (hFE) | 40?C160 | ?? |
| Transition Frequency (fT) | 4 | MHz |
| Junction Temperature (Tj) | 150 | ??C |
| Collector-Base Voltage (Vcbo) | 400 | V |
| Base-Emitter Voltage (Vbe) | 5 | V (max) |
JANHCB2N3440-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current capacity and voltage ratings compared to many standard transistor dies, resulting in enhanced power handling and improved durability. Its low saturation voltage reduces energy losses, increasing efficiency in power circuits. Additionally, the thermal tolerance up to 150??C ensures reliability in harsh industrial environments, making it a preferred choice over conventional transistor dies that may falter under similar conditions.
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Typical Applications
- Power amplification stages in industrial control systems requiring high current and voltage capacity for efficient operation and durability.
- Switching regulators and converters where fast switching and thermal stability are critical for performance.
- Motor control circuits demanding reliable transistor dies capable of handling transient high currents.
- Embedded semiconductor solutions for hybrid integrated circuits needing compact and robust transistor components.
JANHCB2N3440-Transistor-Die Brand Info
The JANHCB2N3440 transistor die is a product offered by a reputable IC manufacturer known for delivering high-quality semiconductor components tailored for industrial and commercial electronics. This device embodies the brand??s commitment to precision engineering, reliability, and performance consistency. Designed to meet rigorous industry standards, it supports engineers in developing solutions that require dependable transistor dies with proven electrical and thermal characteristics.
FAQ
What is the maximum collector current rating for this transistor die?
The maximum collector current rating is 15A, allowing the device to handle substantial current loads typical in power switching and amplification applications.
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What voltage can the transistor die safely withstand?
The transistor die supports a collector-emitter voltage of up to 250V and a collector-base voltage of 400V, ensuring robust operation under high-voltage conditions.
How does the thermal performance influence the transistor??s reliability?
With a maximum junction temperature of 150??C, the device maintains stable performance under elevated temperatures, reducing the risk of thermal failure in demanding industrial environments.
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What is the significance of the DC current gain (hFE) range specified?
The DC current gain ranges from 40 to 160, indicating the transistor??s ability to amplify input current efficiently and enabling design flexibility across various amplification requirements.
Is this transistor die suitable for fast switching applications?
Yes, with a transition frequency of 4 MHz, the device supports moderately high-speed switching, suitable for many power control and signal processing tasks.
