JANTXV2N3636L-Transistor High-Power Switching Transistor in TO-220 Package by JANTX

  • This transistor amplifies electrical signals, enabling efficient control in electronic circuits.
  • Its voltage rating ensures stable operation under varying electrical loads, enhancing circuit safety.
  • The compact package design allows for board-space savings in dense electronics assemblies.
  • Ideal for signal switching applications, it helps reduce power loss and improve system responsiveness.
  • Manufactured to meet industry standards, it offers reliable performance over extended use.
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JANTXV2N3636L-Transistor Overview

The JANTXV2N3636L transistor is a high-performance silicon NPN bipolar junction transistor designed for power amplification and switching applications. Featuring a robust design compliant with military-grade JAN (Joint Army-Navy) standards, this transistor ensures reliable operation under demanding environmental and electrical conditions. It supports collector currents up to 20A and collector-emitter voltages of 60V, making it suitable for industrial, military, and aerospace systems requiring high current and voltage handling. Engineered for rugged durability and longevity, this component is ideal for engineers and sourcing specialists focused on dependable semiconductor solutions. For more detailed specifications and sourcing options, visit IC Manufacturer.

JANTXV2N3636L-Transistor Key Features

  • High Current Capacity: Supports collector currents up to 20A, enabling robust power switching and amplification in demanding circuits.
  • Voltage Handling: Rated for collector-emitter voltages of 60V, providing flexibility in medium-voltage applications.
  • Military-Grade Reliability: Certified to JAN standards, ensuring consistent performance in harsh environments including temperature extremes and mechanical stress.
  • Complementary Device: Designed as a complementary NPN transistor to the 2N3645, facilitating balanced push-pull amplifier designs.

JANTXV2N3636L-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 20 A
Power Dissipation (PD) 115 W
Gain Bandwidth Product (fT) 4 MHz
Transition Frequency (fT) 4 MHz
Package Type TO-3
Junction Temperature (TJ) 200 ??C
DC Current Gain (hFE) 20-70 ?C
Collector-Base Voltage (VCBO) 100 V

JANTXV2N3636L-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced power handling and voltage tolerance compared to typical small-signal transistors, meeting stringent military JAN standards for reliability. Its high collector current rating and rugged TO-3 package provide superior thermal management and durability. These factors contribute to improved circuit stability and longevity, making it a preferred choice for engineers requiring high-performance, reliable power transistors in mission-critical applications.

Typical Applications

  • Power Amplifiers: Used in high-power audio amplification and RF amplification circuits requiring robust current and voltage handling.
  • Switching Regulators: Suitable for high-current switching in power supply designs and voltage regulators.
  • Motor Control Circuits: Enables reliable switching and control of motors in industrial automation systems.
  • Military and Aerospace Electronics: Designed to meet harsh environment requirements in defense and avionics systems.

JANTXV2N3636L-Transistor Brand Info

The JANTXV2N3636L transistor is manufactured under strict military Joint Army-Navy (JAN) standards, ensuring high reliability and performance consistency. As a silicon NPN transistor housed in a TO-3 metal can package, it is engineered for demanding applications requiring durability and stable electrical characteristics. This product reflects the manufacturer’s commitment to quality and ruggedness, making it a trusted component for industrial and defense electronics.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current (IC) rating is 20 amperes, enabling the transistor to handle high power loads suitable for demanding switching and amplification tasks.

Can this transistor operate at high temperatures?

Yes, it is rated for a maximum junction temperature (TJ) of 200??C, allowing reliable operation in elevated temperature environments common in industrial and military applications.

What package type does this transistor use?

The device is housed in a TO-3 metal can package, which provides excellent thermal dissipation and mechanical durability for high-power applications.

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Is this transistor compliant with any specific standards?

Yes, it is certified to meet military JAN (Joint Army-Navy) standards, assuring stringent quality, reliability, and performance under harsh conditions.

What are the typical applications for this transistor?

This transistor is commonly used in power amplifiers, switching regulators, motor control circuits, and military/aerospace electronics where high current and voltage handling with reliable operation is critical.

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