JANTX2N3506L-Transistor NPN Power Transistor – JANT Brand, TO-3 Package

  • Acts as a bipolar junction transistor enabling efficient switching and amplification in electronic circuits.
  • Features a high voltage rating, ensuring stable operation under demanding electrical conditions.
  • Encased in a TO-39 metal can package, offering robust mechanical protection and enhanced heat dissipation.
  • Ideal for use in power regulation circuits where reliable current control is critical for system stability.
  • Manufactured to meet stringent quality standards, supporting consistent performance over extended service life.
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JANTX2N3506L-Transistor Overview

The JANTX2N3506L transistor is a high-performance bipolar junction transistor (BJT) designed for industrial and military-grade applications requiring robust power handling and reliability. Its rugged construction and stringent testing processes ensure stable operation in demanding environments. Known for its high voltage and current ratings, this transistor supports efficient switching and amplification tasks. Engineers and sourcing specialists benefit from its compatibility with legacy systems and its compliance with military standards. For detailed sourcing and technical support, visit IC Manufacturer.

JANTX2N3506L-Transistor Key Features

  • High Voltage Capability: With a collector-emitter voltage rating of 100 V, it supports high-voltage switching applications, enhancing design flexibility.
  • Robust Current Handling: The device can handle continuous collector currents up to 4 A, making it ideal for power amplification and motor control circuits.
  • Military-Grade Quality: Manufactured to stringent military standards, ensuring enhanced reliability and long-term durability under harsh conditions.
  • Thermal Stability: A maximum junction temperature of 200??C enables operation in high-temperature environments without performance degradation.

JANTX2N3506L-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (V_CEO) 100 V
Collector-Base Voltage (V_CBO) 120 V
Emitter-Base Voltage (V_EBO) 7 V
Collector Current (I_C) 4 A
Power Dissipation (P_TOT) 40 W
DC Current Gain (h_FE) 20 to 70 ??
Transition Frequency (f_T) 3 MHz
Maximum Junction Temperature (T_J) 200 ??C

JANTX2N3506L-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many general-purpose BJTs, making it well-suited for power-intensive industrial applications. Its military-grade certification ensures enhanced reliability and consistency under stress, surpassing typical commercial-grade components. The device??s wide operating temperature range and robustness provide greater system uptime and reduced failure rates, positioning it as a dependable choice for engineers prioritizing durability and performance.

Typical Applications

  • Power amplification in industrial control systems requiring high voltage and current handling for effective signal processing.
  • Switching circuits in aerospace and defense equipment where reliability under extreme conditions is critical.
  • Motor driver circuits demanding robust and efficient transistors for managing inductive loads.
  • General-purpose high power switching tasks in harsh environments, including military and ruggedized electronic assemblies.

JANTX2N3506L-Transistor Brand Info

The JANTX2N3506L transistor is part of a legacy series known for its military and industrial-grade semiconductor devices. This product line emphasizes rigorous quality control, extended temperature range operation, and enhanced ruggedness for mission-critical applications. Its design and manufacturing adhere to strict military standards, providing customers with a reliable transistor solution backed by decades of proven performance in demanding sectors.

FAQ

What type of transistor is the JANTX2N3506L?

The device is a bipolar junction transistor (BJT) designed primarily as an NPN power transistor. It is intended for applications requiring high voltage and current capabilities.

What are the maximum voltage ratings for this transistor?

The transistor features a collector-emitter voltage rating of 100 V and a collector-base voltage rating of 120 V, allowing it to operate safely in high-voltage environments.

Can this transistor be used in high-temperature applications?

Yes, the JANTX2N3506L can operate up to a maximum junction temperature of 200??C, making it suitable for environments with elevated thermal demands.

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What is the typical current gain range for this device?

The DC current gain (h_FE) typically ranges between 20 and 70, which supports effective amplification in power circuits.

Is this transistor suitable for military or aerospace applications?

Absolutely. The transistor meets military-grade standards, ensuring it delivers reliability and performance required in aerospace, defense, and other harsh environment applications.

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