JANTX2N3507L-Transistor by JAN | High-Power NPN Transistor | TO-3 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its high voltage rating supports demanding applications, ensuring stable operation under stress.
  • The compact TO-39 metal can package offers durability and saves board space in tight layouts.
  • Ideal for power regulation tasks, it helps maintain consistent current flow in automotive or industrial systems.
  • Manufactured to meet industry standards, it delivers reliable performance over extended use.
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产品上方询盘

JANTX2N3507L-Transistor Overview

The JANTX2N3507L is a high-performance PNP bipolar junction transistor designed for military and aerospace applications, offering exceptional reliability and robust electrical characteristics. It supports high voltage and current handling capabilities, making it suitable for demanding industrial environments. With a maximum collector-emitter voltage of 100V and collector current up to 1.5A, it ensures stable operation under harsh conditions. This transistor??s rugged construction complies with JAN specifications, providing enhanced thermal stability and longevity. Engineers and sourcing specialists rely on this device for precision amplification and switching tasks. For detailed sourcing and technical support, visit IC Manufacturer.

JANTX2N3507L-Transistor Key Features

  • High Voltage Capability: Supports up to 100V collector-emitter voltage, enabling use in high-voltage switching circuits with confidence.
  • Moderate Current Handling: Maximum collector current of 1.5A allows effective power amplification in various control and signal processing applications.
  • Military-Grade Reliability: Manufactured to JAN standards ensuring superior resistance to environmental stress and consistent performance over time.
  • Low Saturation Voltage: Provides efficient switching with reduced power loss, improving overall circuit efficiency.

JANTX2N3507L-Transistor Technical Specifications

Parameter Value Unit
Transistor Type PNP
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (PD) 20 W
DC Current Gain (hFE) 40 to 100
Transition Frequency (fT) 4 MHz
Operating Junction Temperature (TJ) -65 to +200 ??C
Package Type TO-18 Metal Can

JANTX2N3507L-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and ruggedness compared to standard commercial-grade devices. Its compliance with military specifications ensures superior thermal stability and longevity, critical for aerospace and defense systems. The high voltage and current margins combined with low saturation voltage make it ideal for precision switching and amplification tasks where power efficiency and environmental resilience are paramount.

Typical Applications

  • Signal amplification and switching in military and aerospace electronic circuits requiring high reliability and thermal endurance.
  • Power control stages in industrial automation systems where robust transistor operation under stress is essential.
  • General purpose amplification in instrumentation equipment needing stable gain and low noise performance.
  • Replacement and repair of legacy military transistors in avionics and defense communication devices.

JANTX2N3507L-Transistor Brand Info

The JANTX2N3507L is a military-grade transistor widely recognized for its rugged construction and dependable performance. Manufactured to stringent JAN (Joint Army-Navy) quality standards, this device ensures consistent electrical characteristics and enhanced durability in harsh environments. It is a trusted component in defense, aerospace, and other mission-critical industrial applications where failure is not an option. Its metal TO-18 package provides excellent thermal conductivity and mechanical protection, supporting long-term operational stability.

FAQ

What distinguishes the JANTX2N3507L from commercial transistors?

This transistor meets rigorous military specifications, including thermal and electrical tests, ensuring higher reliability and performance stability under extreme environmental conditions compared to typical commercial transistors.

Can this transistor handle high power dissipation?

Yes, the JANTX2N3507L supports power dissipation up to 20 watts, allowing it to operate efficiently in moderate power applications while maintaining stable junction temperature.

Is the JANTX2N3507L suitable for high-frequency applications?

With a transition frequency around 4 MHz, this transistor is suitable for low to moderate frequency amplification and switching but may not be ideal for very high-frequency RF applications.

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产品中间询盘

What package type does this transistor use and why is it important?

It uses a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection, ensuring device longevity and reliability in harsh operating conditions.

What is the typical gain range of this transistor?

The DC current gain (hFE) of this transistor ranges from 40 to 100, offering sufficient amplification capability for various signal processing and power control tasks.

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