JAN2N5153-Transistor by JAN – NPN Transistor, High Gain, TO-126 Package

  • Acts as a bipolar junction transistor for amplifying or switching electronic signals efficiently.
  • Features a high voltage rating to ensure stable operation under demanding electrical conditions.
  • Compact package design offers board-space savings and facilitates integration into tight circuit layouts.
  • Suitable for use in power regulation circuits, improving control and response in electronic devices.
  • Manufactured to meet standard quality controls, ensuring consistent performance and durability over time.
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产品上方询盘

JAN2N5153-Transistor Overview

The JAN2N5153 transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in demanding industrial environments. Featuring a maximum collector-base voltage of 80 V and a collector current rating of up to 600 mA, this device ensures robust operation under varied electrical conditions. Its high gain bandwidth product and low saturation voltage optimize switching efficiency, making it suitable for precision signal control and power management circuits. Engineered to meet military-grade standards, the JAN2N5153 offers enhanced reliability and consistency for critical applications. For more details, visit IC Manufacturer.

JAN2N5153-Transistor Key Features

  • High Voltage Tolerance: Supports a collector-base voltage up to 80 V, enabling use in high-voltage circuits without risk of breakdown.
  • Moderate Collector Current Capacity: Handles continuous collector currents up to 600 mA, suitable for moderate power switching tasks.
  • Low Saturation Voltage: Reduces power losses during switching, improving overall circuit efficiency and thermal management.
  • Military-Grade Reliability: Designed to meet stringent military specifications, ensuring dependable performance in harsh environments.

JAN2N5153-Transistor Technical Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 80 V
Collector-Emitter Voltage (VCEO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40 to 160 ??
Junction Temperature (Tj) 200 ??C
Package Type TO-18 Metal Can ??

JAN2N5153-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage handling and current capacity compared to typical small-signal transistors, with a low saturation voltage that enhances switching speed and reduces power dissipation. Its military-grade construction ensures greater reliability and longevity under harsh operating conditions, making it a preferred choice for industrial and defense electronics requiring consistent performance and durability.

Typical Applications

  • Switching and amplification in industrial control circuits where high voltage and moderate current ratings are essential, ensuring reliable operation in automation systems.
  • Signal processing in communication devices requiring stable gain and low noise performance.
  • Power management modules in embedded systems that demand efficient switching transistors with robust thermal characteristics.
  • Military and aerospace electronics where stringent reliability standards and environmental tolerances are mandatory.

JAN2N5153-Transistor Brand Info

The JAN2N5153 transistor is part of a legacy lineup meeting Joint Army-Navy (JAN) specifications, signifying rigorous quality and performance standards. Manufactured with precision and tested for compliance with military-grade criteria, this device is trusted for high-reliability applications spanning defense, aerospace, and industrial sectors. Its TO-18 metal can package provides excellent thermal dissipation and mechanical robustness, supporting its use in critical and long-life product designs.

FAQ

What is the maximum collector current rating for the JAN2N5153 transistor?

The transistor supports a continuous collector current of up to 600 mA, making it suitable for moderate power switching and amplification tasks in various circuits.

What voltage limits should be observed when using this transistor?

The maximum collector-base and collector-emitter voltages are both rated at 80 volts, while the emitter-base voltage should not exceed 5 volts to avoid breakdown and ensure reliable operation.

How does the low saturation voltage benefit circuit performance?

Low saturation voltage reduces the voltage drop across the transistor when it is fully on, minimizing power loss and heat generation. This enhances efficiency and allows for more compact thermal management solutions.

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产品中间询盘

What package type does the JAN2N5153 use, and why is it important?

This transistor comes in a TO-18 metal can package, which offers excellent thermal conductivity and mechanical stability, essential for reliable operation in demanding industrial and military environments.

Is the JAN2N5153 suitable for high-frequency applications?

With a transition frequency around 100 MHz, this transistor can be employed in moderate high-frequency circuits, such as signal processing and communications, where reliable gain and switching speed are required.

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