JAN2N3634UB-Transistor by JAN | High-Power Switching Transistor | TO-220 Package

  • This transistor enables efficient switching and amplification, improving overall circuit performance.
  • It features a voltage rating suitable for handling moderate power levels, ensuring stable operation under load.
  • The compact package design supports board-space savings and simplifies circuit integration.
  • Ideal for use in power management modules, it enhances energy control and responsiveness in electronic devices.
  • Manufactured under strict quality standards, it offers consistent reliability across various operating conditions.
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JAN2N3634UB-Transistor Overview

The JAN2N3634UB is a high-performance NPN bipolar junction transistor designed for switching and amplification in industrial and military-grade applications. Featuring robust construction and reliable electrical characteristics, this transistor supports collector currents up to 10A and a collector-emitter voltage of 100V. Its rugged design ensures stability under demanding conditions, making it suitable for power control circuits and high-reliability environments. Manufactured to meet stringent military specifications, the device delivers consistent performance with enhanced thermal handling and current gain, optimized for engineers and sourcing specialists seeking durable semiconductor solutions. For more details, visit the IC Manufacturer.

JAN2N3634UB-Transistor Key Features

  • High collector current capacity: Supports up to 10A, enabling efficient switching in power regulation and motor control circuits.
  • Collector-emitter voltage rating of 100V: Allows operation in medium-voltage applications, providing design flexibility.
  • Military-grade reliability: Constructed to meet JAN standards for robustness and long-term stability in harsh environments.
  • Moderate current gain (hFE): Ensures balanced amplification and switching performance suitable for industrial controls.

JAN2N3634UB-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 10 A
Power Dissipation (Ptot) 100 W
DC Current Gain (hFE) 20 to 70 (varies with test conditions)
Transition Frequency (fT) ~3 MHz
Junction Temperature (TJ) +200 ??C (max)
Package Type TO-3 Metal Can

JAN2N3634UB-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its high current handling capability and elevated voltage rating, which offer greater design latitude compared to lower-power alternatives. Its military-grade construction enhances reliability and thermal stability, reducing failure rates in critical systems. The TO-3 package facilitates efficient heat dissipation, supporting higher power applications without compromising performance. These factors make it a preferred choice for engineers seeking ruggedness and consistent gain characteristics in demanding environments.

Typical Applications

  • Power switching circuits requiring high collector current and voltage tolerance, such as motor drives and industrial power regulators.
  • Amplification stages in audio and signal processing equipment where robust gain and thermal management are necessary.
  • Military and aerospace control systems demanding components that meet stringent JAN specifications for durability and reliability.
  • High-power voltage regulators and inverters used in industrial automation and control panels.

JAN2N3634UB-Transistor Brand Info

The JAN2N3634UB is a precision-engineered transistor developed under the Joint Army-Navy (JAN) standards, ensuring military-grade quality and performance. This product is recognized for its durability and reliability in high-stress environments, making it a trusted solution for aerospace, defense, and industrial sectors. The device is manufactured by experienced semiconductor producers specializing in rugged transistor technologies, providing customers with components that meet rigorous testing and quality assurance protocols.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum continuous collector current of 10 amperes, which enables it to handle high-power switching and amplification tasks in industrial applications.

Which package type is used for the JAN2N3634UB device?

This transistor is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical robustness, ideal for high-power dissipation scenarios.

Is this transistor suitable for high-temperature environments?

Yes, it is rated for a maximum junction temperature of up to 200 degrees Celsius, making it suitable for applications that require operation under elevated thermal conditions.

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产品中间询盘

What applications typically use this transistor?

Common applications include power switching circuits, voltage regulators, motor control systems, and military-grade electronic equipment requiring reliable high-current handling and voltage tolerance.

How does the transistor??s gain (hFE) affect its performance?

The DC current gain ranges from 20 to 70, providing a balance between amplification and switching characteristics. This gain range ensures stable operation in both linear and switching modes across various load conditions.

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