JANTX2N2907AP-Transistor-PIND PNP Bipolar Junction Transistor – TO-18 Metal Can Package

  • This transistor controls current flow efficiently, enabling precise signal amplification and switching in circuits.
  • Its PNP configuration supports standard bipolar junction transistor functions, suitable for various electronic designs.
  • The PIND package offers a compact footprint, aiding in board-space savings and simplified assembly.
  • Ideal for general-purpose amplification tasks, it enhances audio and signal processing performance in devices.
  • Manufactured under strict quality controls, it ensures consistent performance and long-term reliability.
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JANTX2N2907AP-Transistor-PIND Overview

The JANTX2N2907AP is a PNP bipolar junction transistor (BJT) designed for high-reliability applications requiring robust switching and amplification performance. Engineered to meet stringent military standards, this transistor delivers consistent operation across a wide temperature range and offers dependable gain characteristics. Its sturdy construction ensures enhanced durability and long service life, making it suitable for aerospace, defense, and industrial electronics. With a complementary design and well-defined electrical parameters, the device is an excellent choice for engineers seeking a rugged transistor with proven performance. For detailed sourcing and technical support, visit IC Manufacturer.

JANTX2N2907AP-Transistor-PIND Key Features

  • High voltage and current rating: Supports up to 60 V collector-emitter voltage and 600 mA collector current, enabling reliable operation in moderate power circuits.
  • Wide operating temperature range: Rated from -55??C to +125??C, ensuring stable performance in harsh environments.
  • Military-grade quality: Manufactured to meet MIL-STD-750 standards, providing enhanced reliability and traceability critical for defense applications.
  • Complementary PNP transistor: Facilitates straightforward pairing with NPN devices for push-pull amplifier circuits or switching applications.

JANTX2N2907AP-Transistor-PIND Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (V_CEO) 60 V
Collector-Base Voltage (V_CBO) 60 V
Emitter-Base Voltage (V_EBO) 5 V
Collector Current (I_C) 600 mA
Power Dissipation (P_D) 800 mW
DC Current Gain (h_FE) 100 ?C 300 (typical)
Transition Frequency (f_T) 100 MHz
Operating Temperature Range (T_J) -55 to +125 ??C

JANTX2N2907AP-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers superior reliability and electrical stability under extreme conditions compared to standard commercial-grade devices. Its military certification ensures consistent gain and leakage parameters, minimizing variation in sensitive circuits. The broad temperature tolerance and robust power ratings deliver dependable performance in aerospace and industrial systems where failure is not an option. These attributes make it a preferred choice for engineers prioritizing longevity and precision in demanding electronic designs.

Typical Applications

  • Signal amplification in military and aerospace communication systems, where reliable transistor switching and gain stability are critical for maintaining signal integrity across temperature extremes.
  • General-purpose switching in control circuits requiring moderate current handling and voltage tolerance.
  • Push-pull amplifier stages in audio and RF applications, leveraging complementary transistor pairs for efficient operation.
  • Industrial instrumentation and sensor interface circuits benefiting from the device??s ruggedness and predictable performance.

JANTX2N2907AP-Transistor-PIND Brand Info

The JANTX2N2907AP transistor is a military-qualified version of the popular 2N2907 PNP transistor. Manufactured according to stringent military standards, this part is designed to deliver high reliability and traceability in critical electronics applications. The JANTX prefix indicates adherence to JAN (Joint Army-Navy) specifications, ensuring superior quality control and consistency for defense and aerospace customers. This device is widely recognized in the industry for its stable electrical characteristics and durability under harsh environmental conditions.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating for the JANTX2N2907AP transistor is 600 mA. This allows it to be used in applications requiring moderate current handling capability without risking device damage or performance degradation.

Can this transistor operate in extreme temperatures?

Yes, this transistor is rated to operate reliably in temperatures ranging from -55??C up to +125??C. This wide temperature range makes it suitable for aerospace, military, and industrial environments where thermal extremes are common.

What type of transistor is this and what are its main electrical characteristics?

This device is a PNP bipolar junction transistor with a collector-emitter voltage rating of 60 V and a typical DC current gain (h_FE) ranging from 100 to 300. It is designed for switching and amplification purposes in rugged applications.

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Is the JANTX2N2907AP suitable for audio amplification circuits?

Yes, due to its complementary nature and stable gain characteristics, it can be effectively used in push-pull amplifier configurations for audio applications, providing efficient amplification with low distortion.

What standards does this transistor comply with for quality assurance?

This transistor complies with MIL-STD-750 and JAN specifications, ensuring it meets military-grade reliability, quality control, and traceability requirements demanded by critical defense and aerospace systems.

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