2N5667S-Transistor by ON Semiconductor | NPN Transistor | TO-18 Metal Can Package

2N5667S-Transistor Overview

The 2N5667S is a high-performance NPN bipolar junction transistor designed for low noise and high gain applications. It delivers reliable amplification with a maximum collector current of up to 10A and a collector-emitter voltage rating of 60V, making it suitable for medium power switching and amplification tasks. Engineered for robust operation, this transistor supports continuous collector dissipation of 60W under ideal cooling conditions. Its low noise characteristics and high current gain enhance signal integrity in critical electronic circuits. For sourcing and technical details, visit IC Manufacturer.

2N5667S-Transistor Key Features

• High collector current capacity: Enables handling up to 10A continuous current for demanding power applications.
• Collector-Emitter voltage rating of 60V: Provides sufficient voltage headroom for medium voltage switching and amplification tasks.
• Low noise figure: Ensures minimal signal distortion, critical for sensitive analog and RF circuits.
• High power dissipation: Supports up to 60W with adequate heat sinking, enhancing reliability in thermal-stressed environments.

2N5667S-Transistor Technical Specifications

2N5667S-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and power dissipation compared to many standard NPN devices, making it ideal for medium power amplification and switching. Its robust voltage ratings and low noise performance provide enhanced reliability and signal clarity, giving engineers a dependable component for high-performance industrial and communication circuits. The combination of high gain and thermal endurance ensures sustained operation under demanding conditions.

Typical Applications

• Audio and RF amplifier stages where low noise and high gain are essential for signal fidelity and amplification accuracy in industrial or communication equipment.
• Power switching circuits requiring reliable handling of continuous currents up to 10A at medium voltages.
• Industrial control systems that demand durable transistors capable of operating at elevated temperatures with high power dissipation.
• General-purpose amplification in consumer and professional electronics where medium power and low distortion are required.

2N5667S-Transistor Brand Info

The 2N5667S is produced by a reputable semiconductor manufacturer specializing in industrial-grade transistors. This product line is known for its stringent quality control and consistent performance in demanding applications. Designed with precision fabrication techniques, the transistor is ideal for engineers sourcing reliable components for amplification and switching in both commercial and industrial electronic systems.

FAQ

What is the maximum collector current the 2N5667S can handle?

The maximum continuous collector current for this transistor is 10 amperes. This high current capacity makes it suitable for medium power applications requiring robust current handling without compromising device integrity.

What voltage ratings are important for using this transistor safely?

The key voltage ratings include a collector-emitter voltage of 60 volts, collector-base voltage of 80 volts, and emitter-base voltage of 7 volts. Staying within these limits ensures reliable operation and prevents breakdown or damage to the device.

How much power dissipation can this transistor manage?

The device can dissipate up to 60 watts with proper heat sinking. This high dissipation capacity allows it to operate under thermal stress in power amplifier or switching circuits without premature failure.

What is the typical current gain range for this transistor?

The DC current gain (hFE) ranges from 50 to 160, providing flexibility in amplification applications. This variation allows designers to select specific gain levels suited for their circuit requirements.

Is this transistor suitable for high-frequency applications?

While this transistor is primarily designed for medium power amplification and switching, its transition frequency is generally limited compared to specialized RF transistors. It is best used in audio or low to mid-frequency circuits rather than very high-frequency applications.