JAN2N5153L-Transistor NPN Amplifier Transistor in TO-92 Package by JAN2N5153L

  • Acts as a transistor for switching and amplification, enabling efficient control of electrical signals.
  • Features a maximum voltage rating suitable for various circuit requirements, ensuring safe operation.
  • Compact package design offers board-space savings, facilitating integration into tight electronic assemblies.
  • Ideal for use in power management circuits, improving performance in devices requiring stable signal control.
  • Manufactured to meet industry reliability standards, providing consistent performance under typical operating conditions.
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JAN2N5153L-Transistor Overview

The JAN2N5153L transistor is a high-performance NPN bipolar junction transistor designed primarily for switching and amplification applications in military and industrial environments. It offers a robust collector current capacity of up to 600mA and a voltage rating suitable for medium-power circuits, ensuring reliable operation under demanding conditions. This device features a low noise figure and high gain, making it ideal for high-frequency and low-level signal amplification. Its hermetically sealed TO-18 metal can package provides enhanced environmental protection and thermal dissipation. For detailed technical support and procurement, visit IC Manufacturer.

JAN2N5153L-Transistor Key Features

  • High Collector Current: Supports up to 600mA, enabling efficient switching and amplification in power-sensitive circuits.
  • Voltage Ratings: Collector-Emitter voltage up to 30V, suitable for medium voltage applications ensuring operational safety.
  • Low Noise Figure: Provides superior signal clarity, essential for RF amplification and sensitive analog circuits.
  • High Gain (hFE): Maintains gain values between 40 to 160 for consistent amplification performance.
  • Hermetic TO-18 Package: Offers excellent environmental protection and thermal performance for reliable field operation.
  • Military Grade Certification: JAN prefix ensures compliance with rigorous military standards for quality and reliability.
  • Fast Switching Capability: Supports switching frequencies suitable for high-speed digital and analog applications.

JAN2N5153L-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (PC) 625 mW
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 40 to 160 ??
Noise Figure Low ??
Operating Temperature Range -55 to +125 ??C
Package Type TO-18 Hermetic Metal Can ??

JAN2N5153L-Transistor Advantages vs Typical Alternatives

This transistor stands out with its military-grade certification and hermetically sealed packaging, which significantly enhance reliability and environmental resistance compared to standard commercial devices. Its high collector current and voltage ratings enable robust performance in demanding industrial and military applications. Additionally, the low noise figure and broad gain range provide superior signal integrity and amplification accuracy, making it a preferred choice over typical alternatives lacking these features.

Typical Applications

  • High-frequency amplifier circuits in military communication equipment, where low noise and stable gain are critical for signal fidelity and reliability.
  • General-purpose switching applications requiring fast response times and robust current handling up to 600mA.
  • Analog signal processing circuits that demand consistent gain and low distortion for precision instrumentation.
  • Environmental and temperature-sensitive electronic systems benefiting from the hermetic TO-18 package??s protection against moisture and contaminants.

JAN2N5153L-Transistor Brand Info

The JAN2N5153L transistor is produced under the JAN (Joint Army-Navy) specification, denoting its compliance with stringent military standards for quality, reliability, and performance. This heritage ensures that the transistor delivers superior robustness and longevity in harsh environments. The device is manufactured with precision processes to meet rigorous operational requirements, making it a trusted component in aerospace, defense, and high-reliability industrial electronics.

FAQ

What is the maximum collector current supported by this transistor?

The maximum collector current rating for this transistor is 600mA, allowing it to handle moderate power levels in switching and amplification applications without risk of damage or performance degradation.

What type of package does the transistor come in, and what are its benefits?

This transistor is housed in a TO-18 hermetically sealed metal can package. This packaging provides excellent protection against environmental factors such as moisture and contaminants and improves thermal dissipation for stable operation under varying temperature conditions.

Is this transistor suitable for high-frequency applications?

Yes, the device features a gain bandwidth product (fT) of approximately 100MHz, making it well-suited for use in high-frequency amplifier and switching circuits commonly found in RF and communication systems.

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What temperature range can this transistor reliably operate within?

The transistor is designed to operate reliably over a temperature range from -55??C to +125??C, meeting the demands of military and industrial applications that require robust performance in extreme environments.

How does this transistor compare to commercial counterparts in terms of reliability?

Due to its JAN military-grade certification and hermetic packaging, this transistor offers enhanced reliability and durability compared to typical commercial devices. It is engineered to withstand harsh conditions and maintain consistent performance over extended periods.

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