JANTXVR2N2907AUB-Transistor Overview
The JANTXVR2N2907AUB is a high-reliability PNP bipolar junction transistor designed for rugged industrial and military-grade applications. Its sturdy construction supports continuous operation under elevated temperature and voltage conditions, ensuring dependable switching and amplification performance. This transistor offers a maximum collector current of 600mA and a voltage rating suitable for medium-power circuits. With a robust TO-18 metal can package, it provides excellent thermal dissipation and mechanical durability, making it ideal for harsh environments. For sourcing and detailed technical data, visit IC Manufacturer.
JANTXVR2N2907AUB-Transistor Key Features
- High Collector Current Capacity: Supports up to 600mA collector current, enabling efficient switching in medium-power circuits.
- Robust Voltage Handling: Collector-emitter voltage rating ensures reliable operation in demanding voltage environments.
- Metal Can TO-18 Package: Provides superior thermal conductivity and mechanical protection for enhanced device longevity.
- Military-Grade Quality: Meets stringent reliability standards, making it suitable for aerospace and defense applications.
JANTXVR2N2907AUB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V (Maximum) |
| Collector Current (Ic) | 600 mA (Maximum) |
| Power Dissipation (Pd) | 800 mW (Maximum) |
| Gain Bandwidth Product (fT) | 100 MHz (Typical) |
| DC Current Gain (hFE) | 40 to 300 (at Ic = 150 mA) |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
JANTXVR2N2907AUB-Transistor Advantages vs Typical Alternatives
This transistor delivers enhanced reliability and thermal stability compared to standard plastic-encapsulated devices. Its high collector current rating combined with a robust TO-18 package allows for superior power handling and mechanical resilience. The wide operating temperature range and military-grade construction make it a preferred choice for mission-critical applications where endurance and consistent performance are essential.
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Typical Applications
- Switching and amplification in industrial control systems requiring high reliability and thermal endurance.
- Military and aerospace electronic circuits where ruggedness and stable gain characteristics are critical.
- General-purpose amplification in audio and signal processing devices within harsh environments.
- Power regulation and driver stages in medium-current electronic equipment.
JANTXVR2N2907AUB-Transistor Brand Info
The JANTXVR2N2907AUB transistor is part of a specialized product line recognized for its military-grade quality and reliability. Manufactured following stringent standards, it offers consistent performance in demanding environments. Its construction and testing ensure compliance with rigorous industrial and defense specifications, making it a trusted component for engineers focused on durability and long-term stability.
FAQ
What type of transistor is the JANTXVR2N2907AUB?
The device is a PNP bipolar junction transistor designed for medium-power amplification and switching tasks. It operates with a collector current up to 600mA and features a metal can TO-18 package for enhanced durability.
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What are the key electrical ratings of this transistor?
The transistor supports a maximum collector-emitter voltage of 60V and a power dissipation rating of 800mW. Its DC current gain ranges from 40 to 300, depending on the operating current, making it versatile for various applications.
In which industries is this transistor typically used?
This transistor is commonly utilized in aerospace, military, and industrial control systems where robustness and reliable performance under temperature extremes are critical for system stability.
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What packaging does the JANTXVR2N2907AUB use, and why is it important?
It uses a TO-18 metal can package, which provides superior thermal conductivity and mechanical protection compared to plastic packages. This ensures enhanced longevity and stable operation in harsh environments.
How does this transistor perform under temperature stress?
The device operates reliably across a wide temperature range from -65??C to +200??C, making it suitable for applications exposed to extreme environmental conditions without compromising performance.
