JAN2N3507AL-Transistor by JAN – High-Power Switching Transistor, TO-3 Package

JAN2N3507AL-Transistor Overview

The JAN2N3507AL is a high-performance PNP bipolar junction transistor (BJT) designed for switching and amplification applications. Featuring robust voltage and current handling capabilities, it supports collector currents up to 8A and collector-emitter voltage ratings of 60V. Its high gain and low saturation voltage make it suitable for industrial and military-grade circuits requiring reliable operation under demanding conditions. This transistor offers enhanced durability through JAN (Joint Army-Navy) quality standards, ensuring consistent performance in critical environments. For design engineers and sourcing specialists, the JAN2N3507AL delivers dependable semiconductor performance with proven reliability. More details can be found at IC Manufacturer.

JAN2N3507AL-Transistor Key Features

• High Collector Current Capacity: Supports up to 8A, enabling efficient control of high-power loads in switching applications.
• Robust Voltage Ratings: With a collector-emitter voltage (V_CEO) of 60V, it reliably operates in circuits requiring moderate voltage withstand capability.
• Low Saturation Voltage: Ensures minimal power loss and improved efficiency in switching, reducing heat dissipation in power stages.
• High DC Current Gain (h_FE): Provides amplification with gains typically ranging from 20 to 70, facilitating stable signal amplification.
• Military-Grade Quality: Manufactured to JAN standards, ensuring superior reliability, robustness, and extended operational life.

JAN2N3507AL-Transistor Technical Specifications

JAN2N3507AL-Transistor Advantages vs Typical Alternatives

This transistor excels in applications requiring high collector current and voltage handling combined with military-grade reliability. Compared to standard PNP BJTs, it offers superior power dissipation and robust gain characteristics, ensuring better performance in demanding industrial and defense circuits. Its low saturation voltage improves switching efficiency, while the JAN certification guarantees enhanced quality control and long-term stability under harsh conditions.

Typical Applications

• Power switching circuits where high current loads require reliable transistor operation, such as motor drivers and relay control.
• Amplification stages in analog signal processing, benefiting from its high gain and low noise characteristics.
• Industrial and military electronics demanding rugged, high-temperature tolerance and dependable performance.
• General-purpose PNP transistor replacement in medium-power transistor arrays and power supply regulation circuits.

JAN2N3507AL-Transistor Brand Info

The JAN2N3507AL transistor is produced under stringent Joint Army-Navy (JAN) standards, reflecting a legacy of high-quality semiconductor manufacturing aimed at defense and aerospace sectors. This designation ensures each device undergoes rigorous testing for electrical performance, thermal stability, and mechanical robustness. The product is widely recognized in the industry for its consistent reliability and suitability for critical applications requiring long-term durability and exacting specifications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is rated at 8 amperes, allowing it to handle substantial load currents in switching and amplification roles without degradation.

Can this transistor operate at high junction temperatures?

Yes, the device supports a maximum junction temperature of up to +200??C, making it suitable for high-temperature environments typical in industrial and military applications.

What type of transistor is this and what is its polarity?

This is a PNP bipolar junction transistor (BJT), which means it uses holes as the primary charge carriers and is typically used in circuits where the emitter is at a higher potential than the collector.

How does the low saturation voltage benefit electronic designs?

A low saturation voltage reduces power loss and heat generation when the transistor is in its fully-on state, improving overall efficiency and reliability in power switching circuits.

Is this transistor suitable for use in defense or aerospace projects?

Yes, as a JAN-certified component, it meets rigorous quality and reliability standards required for defense and aerospace applications, making it a trusted choice for mission-critical systems.